521 + Mcqs in Physical electronics devices and ics miscellaneous Page 7 McqOptions

301.	Consider the JFET circuit given below
A.	2 26 mA
B.	3 39 mA
C.	1 48 mA
D.	2 78 mA
Answer» B. 3 39 mA

Discussion

302.	Moor s law is related to
A.	Speed of operation of bipolar device
B.	Speed of operation of MOS devices
C.	Power rating of MOS devices
D.	Level of integration of MOS devices
Answer» E.

Discussion

303.	Match List-I (State of operation of an N-MOSFET) with List-II (Required condition) and select the correct answer using the code given below the lists
A.	2314
B.	4132
C.	2134
D.	4312
Answer» C. 2134

Discussion

304.	A common source FET amplifier has C
A.	47
B.	35 K
C.	27 K
D.	10 K
Answer» D. 10 K

Discussion

305.	For the FET source follower circuit shown below, R
A.	30 K, 390 ohms
B.	151 K, 1 K
C.	167 K, 500 ohms
D.	200 K, 1 K
Answer» D. 200 K, 1 K

Discussion

306.	The JFET in a circuit shown in figure has an I
A.	150
B.	470
C.	560
D.	1 k
Answer» B. 470

Discussion

307.	For the series connected JFETs, I
A.	1 22 V
B.	2 44 V
C.	0 V
D.	+ 2 44 V
Answer» D. + 2 44 V

Discussion

308.	Metal used in the metallization of CMOS circuits is
A.	Gold
B.	Silver
C.	Iron
D.	Aluminium
Answer» E.

Discussion

309.	Photoetching is a process of
A.	Selective removal of a layer
B.	Diffusion of impurities
C.	Removal of photoresist
D.	Making dicing marks
Answer» B. Diffusion of impurities

Discussion

310.	In monolithic IC fabrication process
A.	(i) only
B.	(ii) and (iv) only
C.	(i), (iii) and (iv) only
D.	(i) and (iv) only
Answer» E.

Discussion

311.	If a small amount of antimony is added to germanium
A.	The resistance is increased.
B.	The germanium will be a p-type semiconductor.
C.	The antimony becomes an acceptor impurity.
D.	There will be more free electrons than holes in the semiconductor.
Answer» E.

Discussion

312.	The movement of a hole is brought about by
A.	The vacancy being filled by a free electron.
B.	The vacancy being filled by a valence electron from a neighbouring atom.
C.	The movement of an atomic core.
D.	The atomic core changing from a + 4 to a + 5 charge.
Answer» C. The movement of an atomic core.

Discussion

313.	When the temperature of an intrinsic semiconductor is increased
A.	Resistance of the semiconductor increases.
B.	Heat energy decreases the atomic radius.
C.	Holes are created in the conduction band.
D.	Energy of the atoms is increased.
Answer» E.

Discussion

314.	When a voltage is applied to an intrinsic semiconductor which is at room temperature
A.	Electrons move to the positive terminal and holes move to the negative terminal.
B.	Holes move to the positive terminal and electrons move to the negative terminal.
C.	Both holes and electrons move to the positive terminal.
D.	Both holes and electrons move to the negative terminal.
Answer» B. Holes move to the positive terminal and electrons move to the negative terminal.

Discussion

315.	Sheet resistance for 1-mil thick silicon wafer with phosphorous doping of 10
A.	300 /square
B.	200 /square
C.	350 /square
D.	240 /square
Answer» C. 350 /square

Discussion

316.	In an n-type semiconductor, the concentration of minority carriers mainly depends upon
A.	The doping technique.
B.	The number of donor atoms.
C.	The temperature of the material.
D.	The quality of the intrinisic material, Ge or Si.
Answer» D. The quality of the intrinisic material, Ge or Si.

Discussion

317.	The conduction band
A.	Is always located at the top of the crystal.
B.	Is also called the forbidden energy gap.
C.	Is a range of energies corresponding to the free electrons.
D.	Is not an allowed energy band.
Answer» D. Is not an allowed energy band.

Discussion

318.	Donor type impurities
A.	Create excess holes.
B.	Can be added to germanium, but not to silicon.
C.	Must have only three valence electrons.
D.	Must have only five valence electrons.
Answer» E.

Discussion

319.	The minimum number of isolation regions required for the circuit shown are
A.	2
B.	3
C.	4
D.	7
Answer» B. 3

Discussion

320.	Threshold voltage of MOSFET can be lowered by:
A.	(iii) only
B.	(i) and (iii) only
C.	(i) and (ii) only
D.	(ii) only
Answer» B. (i) and (iii) only

Discussion

321.	Consider the following steps
A.	2, 4, 3, 1
B.	4, 2, 3, 1
C.	1, 4, 2, 3
D.	1, 2, 3, 4
Answer» D. 1, 2, 3, 4

Discussion

322.	High threshold MOSFET can be obtained by using silicon crystal orientation
A.	<100>
B.	<101>
C.	<110>
D.	<111>
Answer» D. <111>

Discussion

323.	In MOSFET devices the n-channel type is better than the p-channel type in the following respects
A.	It has better noise immunity
B.	It is faster
C.	It is TTL compatible
D.	It has better drive capability
Answer» C. It is TTL compatible

Discussion

324.	A Field-Effect Transistor (FET)
A.	Uses a high-concentration emitter junction
B.	Uses a forward-biased pn-junction
C.	Has a very high input resistance
D.	Depends on minority-carrier flow
Answer» D. Depends on minority-carrier flow

Discussion

325.	The operation of a JEFT involves
A.	A flow of minority carriers
B.	A flow of majority carriers
C.	Recombination
D.	Negative resistance
Answer» C. Recombination

Discussion

326.	An n-channel JFET having a pinch-off voltage V
A.	1 5
B.	2 0
C.	2 5
D.	3 0
Answer» D. 3 0

Discussion

327.	For a MOS capacitor fabricated on a p-type semiconductor, strong inversion occur when
A.	Surface potential equals to fermi potential
B.	Surface potential is zero
C.	Surface potential is negative and equal to fermi potential in magnitude
D.	Surface potential is positive and equal to twice the fermi potential
Answer» D. Surface potential is positive and equal to twice the fermi potential

Discussion

328.	Secondary breakdown occurs in
A.	MOSFET but not in BJT
B.	Both MOSFET and BJT
C.	BJT but not in MOSFET
D.	None of these
Answer» D. None of these

Discussion

329.	The measured transconductance gm of an NMOS transistor operating in the linear region is plotted against the gate voltage V
A.	<img src="http://images.interviewmania.com/wp-content/uploads/2019/04/31oA.png">
B.	<img src="http://images.interviewmania.com/wp-content/uploads/2019/04/31oB.png%20">
C.	<img src="http://images.interviewmania.com/wp-content/uploads/2019/04/31oC.png%20">
D.	<img src="http://images.interviewmania.com/wp-content/uploads/2019/04/31oD.png">
Answer» B. <img src="http://images.interviewmania.com/wp-content/uploads/2019/04/31oB.png%20">

Discussion

330.	Compared to the junction transistor, FET
A.	1 and 3
B.	1 and 2
C.	2 and 4
D.	3 and 4
Answer» D. 3 and 4

Discussion

331.	In amplifier applications FET is operated in the
A.	Controlled resistor region
B.	Controlled source region
C.	Avalanche breakdown region
D.	None of these
Answer» B. Controlled source region

Discussion

332.	Lower chip area requirement of MOS is of advantage in
A.	Low power circuits
B.	High power circuits
C.	Repetative operation circuits
D.	Large scale integration
Answer» E.

Discussion

333.	Two perfectly matched silicon transistors are connected as shown in figure below. Assuming the of the transistor to be very high and forward voltage drop in diodes to be 0 7 V, the value of current I is
A.	0 mA
B.	3 6 mA
C.	4 3 mA
D.	5 7 mA
Answer» C. 4 3 mA

Discussion

334.	The common emitter forward current gain of the transistor shown below is
A.	Saturation region
B.	Cut-off region
C.	Reverse active region
D.	Forward active region
Answer» D. Forward active region

Discussion

335.	In a transistor h
A.	2 M
B.	500 K
C.	2 5 M
D.	780 K
Answer» C. 2 5 M

Discussion

336.	The circuit given below employs a silicon transistor with the = 50. The value of biasing resistance R
A.	120 K
B.	78 K
C.	193 K
D.	122 K
Answer» D. 122 K

Discussion

337.	If an amplifier with gain of 1000 and feedback of = 0 1 had a gain change of 20% due to temperature, the change in gain of the feedback amplifier would be
A.	10%
B.	5%
C.	0 2%
D.	0 01%
Answer» D. 0 01%

Discussion

338.	If = 0 995, I
A.	25 A
B.	100 A
C.	10 1 A
D.	10 5 A
Answer» C. 10 1 A

Discussion

339.	For a PNP transistor, =
A.	15 2 A
B.	52 6 A
C.	72 5 A
D.	1 00 A
Answer» E.

Discussion

340.	If = 0 98, I
A.	2 3 mA
B.	3 1 mA
C.	4 6 mA
D.	5 2 mA
Answer» E.

Discussion

341.	For the 2N 338 transistor, the manufacturing specifies P
A.	10 C/W
B.	100 C/W
C.	1000 C/W
D.	10,000 C/W
Answer» D. 10,000 C/W

Discussion

342.	If the differential and common mode gains of a differential amplifier are 50 to 0 2 respectively, then the CMRR will be
A.	100 dB
B.	49 8 dB
C.	8 7 dB
D.	10 7 dB
Answer» E.

Discussion

343.	A BJT having = 100 is biased at a dc collector current of 1 mA. The values of gm, re and r at the bias point are given respectively by
A.	20 mA/V, 50 , 2 5 k
B.	40 mA/V, 25 , 2 5 k
C.	10 mA/V, 100 , 2 5 k
D.	None of the above
Answer» C. 10 mA/V, 100 , 2 5 k

Discussion

344.	A Si transistor has a thermal ratings, T
A.	143 W
B.	59 W
C.	110 W
D.	85 W
Answer» B. 59 W

Discussion

345.	Consider the circuit shown in figure below. If the of the transistor is 30 and I
A.	Saturation region
B.	Active region
C.	Breakdown region
D.	Cut-off region
Answer» C. Breakdown region

Discussion

346.	An emitter in a bipolar junction transistor is doped much more heavily than the base as it increases the
A.	Emitter efficiency
B.	Base transport factor
C.	Forward current gain
D.	All the three given above
Answer» D. All the three given above

Discussion

347.	A common collector amplifier uses a transistor whose h-paramters are h
A.	0 53
B.	0 93
C.	1 2
D.	2 3
Answer» B. 0 93

Discussion

348.	In the circuit shown below V
A.	200 m mho
B.	400 m mho
C.	200 ohms
D.	400 ohms
Answer» C. 200 ohms

Discussion

349.	The two transistors in figure are identical. If = 25, the current I
A.	28 A
B.	23 2 A
C.	26 A
D.	24 A
Answer» C. 26 A

Discussion

350.	Match List-I (Devices) with List-II (Characteristic) and select the correct answer using the code given below the lists:
A.	1423
B.	2413
C.	2314
D.	1324
Answer» D. 1324

Discussion

Explore topic-wise MCQs in Physical Electronics Devices and ICs.

Consider the JFET circuit given below

Moor s law is related to

Match List-I (State of operation of an N-MOSFET) with List-II (Required condition) and select the correct answer using the code given below the lists

A common source FET amplifier has C

For the FET source follower circuit shown below, R

The JFET in a circuit shown in figure has an I

For the series connected JFETs, I

Metal used in the metallization of CMOS circuits is

Photoetching is a process of

In monolithic IC fabrication process

If a small amount of antimony is added to germanium

The movement of a hole is brought about by

When the temperature of an intrinsic semiconductor is increased

When a voltage is applied to an intrinsic semiconductor which is at room temperature

Sheet resistance for 1-mil thick silicon wafer with phosphorous doping of 10

In an n-type semiconductor, the concentration of minority carriers mainly depends upon

The conduction band

Donor type impurities

The minimum number of isolation regions required for the circuit shown are

Threshold voltage of MOSFET can be lowered by:

Consider the following steps

High threshold MOSFET can be obtained by using silicon crystal orientation

In MOSFET devices the n-channel type is better than the p-channel type in the following respects

A Field-Effect Transistor (FET)

The operation of a JEFT involves

An n-channel JFET having a pinch-off voltage V

For a MOS capacitor fabricated on a p-type semiconductor, strong inversion occur when

Secondary breakdown occurs in

The measured transconductance gm of an NMOS transistor operating in the linear region is plotted against the gate voltage V

Compared to the junction transistor, FET

In amplifier applications FET is operated in the

Lower chip area requirement of MOS is of advantage in

Two perfectly matched silicon transistors are connected as shown in figure below. Assuming the of the transistor to be very high and forward voltage drop in diodes to be 0 7 V, the value of current I is

The common emitter forward current gain of the transistor shown below is

In a transistor h

The circuit given below employs a silicon transistor with the = 50. The value of biasing resistance R

If an amplifier with gain of 1000 and feedback of = 0 1 had a gain change of 20% due to temperature, the change in gain of the feedback amplifier would be

If = 0 995, I

For a PNP transistor, =

If = 0 98, I

For the 2N 338 transistor, the manufacturing specifies P

If the differential and common mode gains of a differential amplifier are 50 to 0 2 respectively, then the CMRR will be

A BJT having = 100 is biased at a dc collector current of 1 mA. The values of gm, re and r at the bias point are given respectively by

A Si transistor has a thermal ratings, T

Consider the circuit shown in figure below. If the of the transistor is 30 and I

An emitter in a bipolar junction transistor is doped much more heavily than the base as it increases the

A common collector amplifier uses a transistor whose h-paramters are h

In the circuit shown below V

The two transistors in figure are identical. If = 25, the current I

Match List-I (Devices) with List-II (Characteristic) and select the correct answer using the code given below the lists: