MCQOPTIONS
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MCQOPTIONS
This section includes 521 Mcqs, each offering curated multiple-choice questions to sharpen your Physical Electronics Devices and ICs knowledge and support exam preparation. Choose a topic below to get started.
| 501. |
An intrinsic semiconductor with energy gap 1 eV has a carrier concentration N at temperature 200 K. Another intrinsic semiconductor has the same value of carrier concentration N at temperature 600 K. What is the energy gap value for the second semiconductor? |
| A. | (1/3) eV |
| B. | (3/2) eV |
| C. | 3 eV |
| D. | 9 eV |
| Answer» B. (3/2) eV | |
| 502. |
p-type semiconductor as a whole |
| A. | Positively charged |
| B. | Negatively charged |
| C. | Electrically neutral |
| D. | Half of it positively charged and rest half negatively charged |
| Answer» D. Half of it positively charged and rest half negatively charged | |
| 503. |
The drift velocity of electrons, in Si |
| A. | Is proportional to the electric field for all values of electric field |
| B. | In independent of the electric field |
| C. | Increases at low values of electric field and decreases at high values of electric field exhibiting diferential resistance |
| D. | Increases linearly with electric field at low values of electric field and gradually saturates at higher values of electric field |
| Answer» E. | |
| 504. |
The germanium transistors are seldom used above |
| A. | 60 C |
| B. | 75 C |
| C. | 175 C |
| D. | 125 C |
| Answer» C. 175 C | |
| 505. |
In n-type semiconductor, there are |
| A. | J = nq |
| B. | J = E a |
| C. | J = n E |
| D. | J = nq |
| Answer» D. J = nq | |
| 506. |
In p-type semiconductor, there are |
| A. | No majority carriers |
| B. | Electrons as majority carriers |
| C. | Immobile positive ions |
| D. | Immobile negative ions |
| Answer» E. | |
| 507. |
Which of the following statement is not true for a hole? |
| A. | Holes may constitute an electric current |
| B. | Holes can be considered as a net positive charge |
| C. | Holes can exist in any material including conductors |
| D. | Holes can exist in certain semiconductor materials only |
| Answer» D. Holes can exist in certain semiconductor materials only | |
| 508. |
The resistivities of the two sides of a step graded junction are 5 -cm (p-side) and 2 5 -cm (n-side). The height of potential barrier V0? |
| A. | 593 4 mV |
| B. | 593 4 mV |
| C. | 5 934 mV |
| D. | 59 34 mV |
| Answer» C. 5 934 mV | |
| 509. |
A heavily doped n-typed semiconductor has the following data: |
| A. | 0 00005 |
| B. | 2,000 |
| C. | 10,000 |
| D. | 20,000 |
| Answer» C. 10,000 | |
| 510. |
Current density in a conducting media is |
| A. | J = nq |
| B. | J = E a |
| C. | J = n E |
| D. | J = nq |
| Answer» C. J = n E | |
| 511. |
When n-side is lightly doped as compare to p-side then penetration of depletion region |
| A. | Is more on the p-side |
| B. | Is more on the n-side |
| C. | Same on both side |
| D. | None of these |
| Answer» C. Same on both side | |
| 512. |
Fermi level for p-type semiconductor lies |
| A. | Near valence band |
| B. | Near conduction band |
| C. | In valence band |
| D. | In conduction band |
| Answer» D. In conduction band | |
| 513. |
Fermi level for an intrinsic semiconductor lies |
| A. | Near valence band |
| B. | Near conduction band |
| C. | Middle of valence and conduction band |
| D. | Can lie anywhere |
| Answer» D. Can lie anywhere | |
| 514. |
In a p-n junction at zero bias, the equilibrium current is |
| A. | Due to diffusion of minority carriers |
| B. | Due to diffusion of majority carriers |
| C. | Zero because equal no. of charges cross the junction |
| D. | Zero because no charges cross the junction |
| Answer» D. Zero because no charges cross the junction | |
| 515. |
In a n-type semiconductor, as temperature T increases, the fermi level |
| A. | Moves towards conduction band |
| B. | Moves towards middle of forbidden energy gap |
| C. | Does not shift |
| D. | Shifting depends on concentration of donor atoms |
| Answer» C. Does not shift | |
| 516. |
In a n-type semiconductor, as the donar impurities ND increases, the fermi level EF |
| A. | Remains unalerted |
| B. | Moves towards valence band |
| C. | Moves towards conduction band |
| D. | Shifting depends on temperature |
| Answer» D. Shifting depends on temperature | |
| 517. |
The switching speed of pn-junction depends primarily on |
| A. | Mobility of majority carriers in n-region |
| B. | Mobility of minority carriers in p-region |
| C. | Lifetime of minority carriers in p-region |
| D. | Lifetime of minority carriers in n-region |
| Answer» E. | |
| 518. |
Velocity of an electron is |
| A. | Proportional to mobility |
| B. | Inversely proportional to mobility |
| C. | Constant |
| D. | Proportional to square of mobility |
| Answer» B. Inversely proportional to mobility | |
| 519. |
At very high-temperature n-type semiconductor behaves as |
| A. | Metal |
| B. | Insulator |
| C. | Extrinsic semiconductor |
| D. | None of the above |
| Answer» B. Insulator | |
| 520. |
The space charge in a pn-junction consists of |
| A. | (i) and (ii) only |
| B. | (i) and (iii) only |
| C. | (ii) and (iv) only |
| D. | (iii) and (iv) only |
| Answer» E. | |
| 521. |
For p-type material fermi level can be expressed as |
| A. | <table><tr><td rowspan="2"> E<sub>F</sub>= E<sub>V</sub> - kT In</td><td rowspan="2"><img src="https://www.indiabix.com/_files/images/aptitude/1-sym-oparen-h1.gif"></td><td style="border-bottom:1px solid #000000;vertical-align:bottom;padding-bottom:2px;">N<sub>V</sub></td><td rowspan="2"><img src="https://www.indiabix.com/_files/images/data-interpretation/common/15-sym-cparen-h1.gif"> </td></tr><tr><td style="text-align: center;">N<sub>A</sub></td></tr></table> |
| B. | <table><tr><td rowspan="2"> E<sub>F</sub>= E<sub>C</sub> + kT In</td><td rowspan="2"><img src="https://www.indiabix.com/_files/images/aptitude/1-sym-oparen-h1.gif"></td><td style="border-bottom:1px solid #000000;vertical-align:bottom;padding-bottom:2px;">N<sub>V</sub></td><td rowspan="2"><img src="https://www.indiabix.com/_files/images/data-interpretation/common/15-sym-cparen-h1.gif"> </td></tr><tr><td style="text-align: center;">N<sub>A</sub></td></tr></table> |
| C. | <table><tr><td rowspan="2"> E<sub>F</sub>= E<sub>C</sub> + kT In</td><td rowspan="2"><img src="https://www.indiabix.com/_files/images/aptitude/1-sym-oparen-h1.gif"></td><td style="border-bottom:1px solid #000000;vertical-align:bottom;padding-bottom:2px;">N<sub>A</sub></td><td rowspan="2"><img src="https://www.indiabix.com/_files/images/data-interpretation/common/15-sym-cparen-h1.gif"> </td></tr><tr><td style="text-align: center;">N<sub>V</sub></td></tr></table> |
| D. | <table><tr><td rowspan="2"> E<sub>F</sub>= E<sub>C</sub> + kT In</td><td rowspan="2"><img src="https://www.indiabix.com/_files/images/aptitude/1-sym-oparen-h1.gif"></td><td style="border-bottom:1px solid #000000;vertical-align:bottom;padding-bottom:2px;">N<sub>A</sub></td><td rowspan="2"><img src="https://www.indiabix.com/_files/images/data-interpretation/common/15-sym-cparen-h1.gif"> </td></tr><tr><td style="text-align: center;">N<sub>V</sub></td></tr></table> |
| Answer» C. <table><tr><td rowspan="2"> E<sub>F</sub>= E<sub>C</sub> + kT In</td><td rowspan="2"><img src="https://www.indiabix.com/_files/images/aptitude/1-sym-oparen-h1.gif"></td><td style="border-bottom:1px solid #000000;vertical-align:bottom;padding-bottom:2px;">N<sub>A</sub></td><td rowspan="2"><img src="https://www.indiabix.com/_files/images/data-interpretation/common/15-sym-cparen-h1.gif"> </td></tr><tr><td style="text-align: center;">N<sub>V</sub></td></tr></table> | |