For the FET source follower circuit shown below, R

1.	For the FET source follower circuit shown below, R
A.	30 K, 390 ohms
B.	151 K, 1 K
C.	167 K, 500 ohms
D.	200 K, 1 K
Answer» D. 200 K, 1 K

Discussion

No Comment Found

Related MCQs

The transconductance gm of the transistor shown below in figure is 10 mS. The value of the input resistance Rin is
Consider the circuit shown in figure below. If the of the transistor is 30 and ICBO = 20 nA and the input voltage is + 5 V, the transistor would be operating in
The common emitter forward current gain of the transistor shown below is F = 100. The transistor is operating in
Which of the following can be determined by using a Hall crystal? 1. Concentration of holes in a p-type semiconductor. 2. Concentration of electrons in an n-type semiconductor. 3. Temperature of a the set-up with any type of semiconductor. 4. Diffusion constant and life-time of minority carriers of any type of semiconductor. Select the correct answer using the code given below:
With this Zener diode in its on state . What is the level of IZ for the maximum load resistance?
In a voltage regulator network with fixed RL and R, what element dictates the minimum level of source voltage?
In a Hall effect experiment, a p-type semiconductor sample with hole concentration p1 is used. The measured value of the Hall voltage is VH1. If the p-type sample is now replaced by another p-type sample with hole concentration p2 where p2 = 2p1. What is the net Hall voltage VH2?
Photons of energy 1 53 10 19 joule are incident on a photodiode which has a respectivity of 0 65 A/W. If the optical power level is 10 W, what is the photocurrent generated?
In a Hall effect experiment, a p-type semiconductor sample with hole concentration p1 is used. The measured value of the Hall voltage is VH1. If the p-type sample is now replaced by another p-type sample with hole concentration p2 where p2 = 2p1. What is the net Hall voltage VH2?
A heavily doped n-typed semiconductor has the following data: Hole-electron mobility ratio: 0 4 Doping concentration: 4 2 108 atoms/m3 Intrinsic concentration: 1 5 104 atoms/m3 The ratio of conductance of the n-type semiconductor to that of the intrinsic semiconductor of same material and at the same temperature is given by

For the FET source follower circuit shown below, R

Discussion

No Comment Found

Related MCQs

Reply to Comment