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MCQOPTIONS
This section includes 521 Mcqs, each offering curated multiple-choice questions to sharpen your Physical Electronics Devices and ICs knowledge and support exam preparation. Choose a topic below to get started.
| 451. |
In the figure shown below, D |
| A. | 20 mA, A to B |
| B. | 20 mA, B to A |
| C. | 50 mA, A to B |
| D. | 50 mA, B to A |
| Answer» D. 50 mA, B to A | |
| 452. |
Calculate I |
| A. | 2 mA, 0 mA |
| B. | 4 mA, 2 mA |
| C. | 2 mA, 2 mA |
| D. | 2 mA, 4 mA |
| Answer» E. | |
| 453. |
In the breakdown region, a Zener diode behaves like a |
| A. | Constant voltage source |
| B. | Constant current source |
| C. | Constant resistance source |
| D. | None of the above |
| Answer» B. Constant current source | |
| 454. |
The current in the diode D |
| A. | 0 mA |
| B. | 1 mA |
| C. | 2 mA |
| D. | 1.5 mA |
| Answer» D. 1.5 mA | |
| 455. |
A voltage signal 10 sin t is applied to the circuit with ideal diodes, as shown in figure. The maximum and minimum values of the output waveform V |
| A. | + 10 V and 10 V |
| B. | + 4 V and 4 V |
| C. | + 7 V and 4 V |
| D. | + 4 V and 7 V |
| Answer» E. | |
| 456. |
At high frequencies, ordinary diodes does not work properly because of |
| A. | Forward bias |
| B. | Reverse bias |
| C. | Breaks down |
| D. | Charge storage |
| Answer» E. | |
| 457. |
In figure, a silicon diode is carrying a constant current of 1 mA. When the temperature of the diode is 20 C, V |
| A. | 750 mV |
| B. | 650 mV |
| C. | 680 mV |
| D. | 700 mV |
| Answer» C. 680 mV | |
| 458. |
The diffusion capacitance of a forward biased p |
| A. | Width of the depletion region |
| B. | Mean lifetime of the holes |
| C. | Mean lifetime of the electrons |
| D. | Junction area |
| Answer» C. Mean lifetime of the electrons | |
| 459. |
What is the reverse recovery time of a diode when switched from forward bias V |
| A. | Time taken to remove the stored minority carriers |
| B. | Time taken by the diode voltage to attain zero value |
| C. | Time to remove stored minority carriers plus the time to bring the diode voltage to reverse bias V |
| D. | <sub>R</sub> |
| E. | Time taken by the diode current to reverse |
| Answer» B. Time taken by the diode voltage to attain zero value | |
| 460. |
In zener and avalanche breakdown diodes, current flow is due to |
| A. | Minority carriers |
| B. | Majority carriers |
| C. | Minority as well as majority carriers |
| D. | None of these |
| Answer» C. Minority as well as majority carriers | |
| 461. |
A material has conductivity of a 10 2 mho/m and a relative permittivity of 4, the frequency at which the conduction current in the medium is equal to the displacement current is |
| A. | 45 MHz |
| B. | 90 MHz |
| C. | 450 MHz |
| D. | 900 MHz |
| Answer» B. 90 MHz | |
| 462. |
Assume that D |
| A. | 0 mA |
| B. | 0 5 mA |
| C. | 1 mA |
| D. | 2 mA |
| Answer» B. 0 5 mA | |
| 463. |
Assuming that the diodes are ideal in figure, the current in diode D |
| A. | 8 mA |
| B. | 5 mA |
| C. | 0 mA |
| D. | 3 mA |
| Answer» D. 3 mA | |
| 464. |
Two p-n junction diodes are connected back to back to make a transistor. Which one of the following is correct? |
| A. | The current gain of such a transistor will be high |
| B. | The current gain of such a transistor will be moderate |
| C. | It cannot be used as a transistor due to large base width |
| D. | It can be used only for pnp transistor |
| Answer» D. It can be used only for pnp transistor | |
| 465. |
Diffusion current in a pn-junction is influenced by |
| A. | Applied voltage |
| B. | Concentration gradient |
| C. | Concentration |
| D. | All of these |
| Answer» C. Concentration | |
| 466. |
Determine the total discharge time for the capacitor in a clamper having C = 0.01 F and R = 500 k . |
| A. | 5 ms |
| B. | 25 ms |
| C. | 2.5 ms |
| D. | 50 ms |
| Answer» B. 25 ms | |
| 467. |
The peak for both half cycles of the output waveform |
| A. | 16 V, 4 V |
| B. | 16 V, 4 V |
| C. | 16 V, 4 V |
| D. | 12 V, 4 V |
| Answer» B. 16 V, 4 V | |
| 468. |
Determine the peak value of the output waveform |
| A. | 5 V |
| B. | 15 V |
| C. | 25 V |
| D. | 20 V |
| Answer» C. 25 V | |
| 469. |
Determine the average value of the current through the load resistor |
| A. | 2.5 mA |
| B. | 0 mA |
| C. | 1.674 mA |
| D. | 1.479 mA |
| Answer» D. 1.479 mA | |
| 470. |
Determine the peak value of the current through the load resistor |
| A. | 2.325 mA |
| B. | 5 mA |
| C. | 1.25 mA |
| D. | 0 mA |
| Answer» B. 5 mA | |
| 471. |
Drift current in a pn-junction is influenced by |
| A. | Applied voltage |
| B. | Concentration gradient |
| C. | Concentration |
| D. | All of these |
| Answer» B. Concentration gradient | |
| 472. |
Reverse saturation current in a pn-junction diode |
| A. | Increases with increasing reverse voltage |
| B. | Decreases with increasing reverse voltage |
| C. | Independent from the reverse voltage |
| D. | None of these |
| Answer» D. None of these | |
| 473. |
Bridge rectifiers are preferred because |
| A. | They require small transformer |
| B. | Less peak inverse voltage |
| C. | Both (A) and (B) |
| D. | None of these |
| Answer» D. None of these | |
| 474. |
The diference between a hole and a electron is that hole |
| A. | Has no inertia |
| B. | Has no mass |
| C. | Has no momentum |
| D. | Always remains in the valence band |
| Answer» E. | |
| 475. |
For a forward bias pn-junction diode, diffusion capacitance varies |
| A. | Linearly with current |
| B. | Square of current |
| C. | Inversely with current |
| D. | Does not vary with current |
| Answer» B. Square of current | |
| 476. |
The total current density of electrons is expressed as |
| A. | <table><tr><td rowspan="2">J<sub>n</sub> = qn <sub>n</sub>E + <sub>q</sub>D<sub>n</sub></td><td style="border-bottom:1px solid #000000;vertical-align:bottom;padding-bottom:2px;"><center>dn</center></td></tr><td align="center">dx </td></table> |
| B. | <table><tr><td rowspan="2">J<sub>n</sub> = qn <sub>n</sub>E - <sub>q</sub>D<sub>n</sub></td><td style="border-bottom:1px solid #000000;vertical-align:bottom;padding-bottom:2px;"><center>dn</center></td></tr><td align="center">dx </td></table> |
| C. | <table><tr><td rowspan="2">J<sub>n</sub> = qn <sub>n</sub>E - A <sub>q</sub>D<sub>n</sub></td><td style="border-bottom:1px solid #000000;vertical-align:bottom;padding-bottom:2px;"><center>dn</center></td></tr><td align="center">dx </td></table> |
| D. | None of these |
| Answer» B. <table><tr><td rowspan="2">J<sub>n</sub> = qn <sub>n</sub>E - <sub>q</sub>D<sub>n</sub></td><td style="border-bottom:1px solid #000000;vertical-align:bottom;padding-bottom:2px;"><center>dn</center></td></tr><td align="center">dx </td></table> | |
| 477. |
A Clipper circuit always |
| A. | Need a dc source |
| B. | Clips both cycles of input signal |
| C. | Clips upper portion of the signal |
| D. | Clips some part of the input signal |
| Answer» E. | |
| 478. |
Which diode(s) has (have) a zero voltage drop in the ideal model? |
| A. | Si |
| B. | Ge |
| C. | Both Si and Ge |
| D. | Neither Si nor Ge |
| Answer» D. Neither Si nor Ge | |
| 479. |
Determine V |
| A. | 9.3 V |
| B. | 10 V |
| C. | 1 V |
| D. | 0 V |
| Answer» C. 1 V | |
| 480. |
Determine the voltage across the resistor |
| A. | 0 V |
| B. | 0.09 V |
| C. | 0.2 V |
| D. | 0.44 V |
| Answer» D. 0.44 V | |
| 481. |
Determine the current through each diode if E |
| A. | 4.65 mA |
| B. | 9.3 mA |
| C. | 18.6 mA |
| D. | 0.7 mA |
| Answer» C. 18.6 mA | |
| 482. |
Determine the current level if E = 15 V and R = 3 k |
| A. | 0 A |
| B. | 4.76 mA |
| C. | 5 mA |
| D. | 5 A |
| Answer» D. 5 A | |
| 483. |
An open circuit can have any voltage across its terminals, but the current is always_____ |
| A. | 5 A |
| B. | 0 A |
| C. | 1 A |
| D. | a |
| Answer» C. 1 A | |
| 484. |
Determine I |
| A. | 29.40 mA |
| B. | 30.30 mA |
| C. | 14.70 mA |
| D. | None of these |
| Answer» D. None of these | |
| 485. |
A diode is in the _____ state if the current established by the applied sources is such that its direction matches that of the arrow in the diode symbol, and V |
| A. | Off |
| B. | On |
| C. | Neutral |
| D. | Quiescent |
| Answer» C. Neutral | |
| 486. |
What is the voltage measured from the negative terminal of C |
| A. | 10 V |
| B. | 50 V |
| C. | 25 V |
| D. | 20 V |
| Answer» E. | |
| 487. |
When reverse bias is applied to a junction diode, it |
| A. | Increases the potential barrier |
| B. | Decreases the potential barrier |
| C. | Greatly increases the minority carrier current |
| D. | Greatly increases the majority carrier current |
| Answer» B. Decreases the potential barrier | |
| 488. |
Leakage current of a junction diode |
| A. | Is due to majority carriers |
| B. | Decreases with decreasing temperature |
| C. | Is in mA or A range |
| D. | None of these |
| Answer» C. Is in mA or A range | |
| 489. |
Depletion layer width.......under.......condition and....... under .......condition. |
| A. | Decreases, forward biased, increases, reverse biased |
| B. | Increases, forward biased, decreases reverse biased |
| C. | Decreases, reverse biased, increases, forward biased |
| D. | None of these |
| Answer» B. Increases, forward biased, decreases reverse biased | |
| 490. |
The cause of potential barrier in a pn-junction diode is |
| A. | Depletion of positive charges near the junction |
| B. | Concentration of positive charges near the junction |
| C. | Depletion of negative charges near the junction |
| D. | Concentration of positive and negative charges near the junction |
| Answer» E. | |
| 491. |
The volt equivalent of temperature is given by |
| A. | <table><tr><td style="border-bottom:1px solid #000000;vertical-align:bottom;padding-bottom:2px;"><center>q</center></td></tr><td align="center">kT </td></table> |
| B. | qkT |
| C. | <table><tr><td style="border-bottom:1px solid #000000;vertical-align:bottom;padding-bottom:2px;"><center>kT</center></td></tr><td align="center">q </td></table> |
| D. | kT |
| Answer» D. kT | |
| 492. |
When a diode is heavily doped |
| A. | Is due to majority carriers |
| B. | Decreases with decreasing temperature |
| C. | Is in mA or A range |
| D. | None of these |
| Answer» D. None of these | |
| 493. |
Photons of energy 1 53 10 |
| A. | 64 A |
| B. | 1 5 A |
| C. | 2 1 A |
| D. | 6 5 A |
| Answer» E. | |
| 494. |
Which of the following can be determined by using a Hall crystal? |
| A. | Only 1 and 2 |
| B. | 1, 2 and 4 |
| C. | Only 3 and 4 |
| D. | Only 2 and 4 |
| Answer» B. 1, 2 and 4 | |
| 495. |
For n-type material fermi level can be expressed as |
| A. | <table><tr><td rowspan="2"> E<sub>F</sub>= E<sub>c</sub> - kT In</td><td rowspan="2"><img src="https://www.indiabix.com/_files/images/aptitude/1-sym-oparen-h1.gif"></td><td style="border-bottom:1px solid #000000;vertical-align:bottom;padding-bottom:2px;">N<sub>C</sub></td><td rowspan="2"><img src="https://www.indiabix.com/_files/images/data-interpretation/common/15-sym-cparen-h1.gif"> </td></tr><tr><td style="text-align: center;">N<sub>D</sub></td></tr></table> |
| B. | <table><tr><td rowspan="2"> E<sub>F</sub>= E<sub>c</sub> + kT In</td><td rowspan="2"><img src="https://www.indiabix.com/_files/images/aptitude/1-sym-oparen-h1.gif"></td><td style="border-bottom:1px solid #000000;vertical-align:bottom;padding-bottom:2px;">N<sub>C</sub></td><td rowspan="2"><img src="https://www.indiabix.com/_files/images/data-interpretation/common/15-sym-cparen-h1.gif"> </td></tr><tr><td style="text-align: center;">N<sub>D</sub></td></tr></table> |
| C. | <table><tr><td rowspan="2"> E<sub>F</sub>= E<sub>c</sub> - kT In</td><td rowspan="2"><img src="https://www.indiabix.com/_files/images/aptitude/1-sym-oparen-h1.gif"></td><td style="border-bottom:1px solid #000000;vertical-align:bottom;padding-bottom:2px;">N<sub>D</sub></td><td rowspan="2"><img src="https://www.indiabix.com/_files/images/data-interpretation/common/15-sym-cparen-h1.gif"> </td></tr><tr><td style="text-align: center;">N<sub>C</sub></td></tr></table> |
| D. | None of these |
| Answer» B. <table><tr><td rowspan="2"> E<sub>F</sub>= E<sub>c</sub> + kT In</td><td rowspan="2"><img src="https://www.indiabix.com/_files/images/aptitude/1-sym-oparen-h1.gif"></td><td style="border-bottom:1px solid #000000;vertical-align:bottom;padding-bottom:2px;">N<sub>C</sub></td><td rowspan="2"><img src="https://www.indiabix.com/_files/images/data-interpretation/common/15-sym-cparen-h1.gif"> </td></tr><tr><td style="text-align: center;">N<sub>D</sub></td></tr></table> | |
| 496. |
Fermi-Dirac function is given by |
| A. | (A) |
| B. | (B) |
| C. | (C) |
| D. | (D) |
| Answer» B. (B) | |
| 497. |
When p-side is lightly doped as compare to the n-side then penetration of depletion region |
| A. | Is more on the p-side |
| B. | Is more on the n-side |
| C. | Same on both side |
| D. | None of these |
| Answer» B. Is more on the n-side | |
| 498. |
At very high-temperature p-type semiconductor behaves as |
| A. | Intrinsic semiconductor |
| B. | Metal |
| C. | Extrinsic semiconductor |
| D. | None of the above |
| Answer» B. Metal | |
| 499. |
Band gap for semiconductor is given by |
| A. | <table><tr><td rowspan="2"> E<sub>g</sub>= kT In</td><td rowspan="2"><img src="https://www.indiabix.com/_files/images/aptitude/1-sym-oparen-h1.gif"></td><td style="border-bottom:1px solid #000000;vertical-align:bottom;padding-bottom:2px;">N<sub>C</sub>N<sub>V</sub></td><td rowspan="2"><img src="https://www.indiabix.com/_files/images/data-interpretation/common/15-sym-cparen-h1.gif"> </td></tr><tr><td style="text-align: center;">N<sub>i</sub><sup>2</sup></td></tr></table> |
| B. | <table><tr><td rowspan="2"> E<sub>g</sub>= kT In</td><td rowspan="2"><img src="https://www.indiabix.com/_files/images/aptitude/1-sym-oparen-h1.gif"></td><td style="border-bottom:1px solid #000000;vertical-align:bottom;padding-bottom:2px;">N<sub>A</sub>N<sub>D</sub></td><td rowspan="2"><img src="https://www.indiabix.com/_files/images/data-interpretation/common/15-sym-cparen-h1.gif"> </td></tr><tr><td style="text-align: center;">N<sub>C</sub>N<sub>V</sub></td></tr></table> |
| C. | <table><tr><td rowspan="2"> E<sub>g</sub>= kT In</td><td rowspan="2"><img src="https://www.indiabix.com/_files/images/aptitude/1-sym-oparen-h1.gif"></td><td style="border-bottom:1px solid #000000;vertical-align:bottom;padding-bottom:2px;">N<sub>C</sub>N<sub>V</sub></td><td rowspan="2"><img src="https://www.indiabix.com/_files/images/data-interpretation/common/15-sym-cparen-h1.gif"> </td></tr><tr><td style="text-align: center;">N<sub>i</sub></td></tr></table> |
| D. | None of the above |
| Answer» B. <table><tr><td rowspan="2"> E<sub>g</sub>= kT In</td><td rowspan="2"><img src="https://www.indiabix.com/_files/images/aptitude/1-sym-oparen-h1.gif"></td><td style="border-bottom:1px solid #000000;vertical-align:bottom;padding-bottom:2px;">N<sub>A</sub>N<sub>D</sub></td><td rowspan="2"><img src="https://www.indiabix.com/_files/images/data-interpretation/common/15-sym-cparen-h1.gif"> </td></tr><tr><td style="text-align: center;">N<sub>C</sub>N<sub>V</sub></td></tr></table> | |
| 500. |
On Increasing very high temperature in p-type semiconductor the fermi level will move |
| A. | Upward |
| B. | Downward |
| C. | Anywhere |
| D. | None of these |
| Answer» B. Downward | |