1.

An intrinsic semiconductor with energy gap 1 eV has a carrier concentration N at temperature 200 K. Another intrinsic semiconductor has the same value of carrier concentration N at temperature 600 K. What is the energy gap value for the second semiconductor?

A. (1/3) eV
B. (3/2) eV
C. 3 eV
D. 9 eV
Answer» B. (3/2) eV


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