MCQOPTIONS
Home
About Us
Contact Us
Bookmark
Saved Bookmarks
Testing Subject
General Aptitude
Logical and Verbal Reasoning
English Skills Ability
Technical Programming
Current Affairs
General Knowledge
Finance & Accounting
GATE (Mechanical Engineering)
Chemical Engineering
→
Manufacturing Processes
→
Friction Welding
→
In metal-assisted etching of porous silicon, the o...
1.
In metal-assisted etching of porous silicon, the oxidant is reduced at the noble metal surface.
A.
True
B.
False
Answer» B. False
Show Answer
Discussion
No Comment Found
Post Comment
Related MCQs
High concentrations of oxidant result in isotropic etching.
The etching rate is determined by the HF concentration when the ratio acid/oxidant is lower than _____
At high concentrations of HF, the etching rate is determined by _____
In metal-assisted etching of porous silicon, the oxidant is reduced at the noble metal surface.
Reply to Comment
×
Name
*
Email
*
Comment
*
Submit Reply
Your experience on this site will be improved by allowing cookies. Read
Cookie Policy
Reject
Allow cookies