MCQOPTIONS
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This section includes 236 Mcqs, each offering curated multiple-choice questions to sharpen your Electrical Engineering knowledge and support exam preparation. Choose a topic below to get started.
| 51. |
IC = ß IB + ___________ |
| A. | CBO |
| B. | C |
| C. | CEO |
| D. | IE |
| Answer» D. IE | |
| 52. |
A resonant circuit contains ___________ elements |
| A. | and L only |
| B. | and C only |
| C. | nly R |
| D. | and C |
| Answer» E. | |
| 53. |
If a high degree of selectivity is desired, then double-tuned circuit should have ___________ coupling |
| A. | oose |
| B. | ight |
| C. | ritical |
| D. | one of the above |
| Answer» B. ight | |
| 54. |
A tuned amplifier is generally operated in ___________ operation |
| A. | lass A |
| B. | lass C |
| C. | lass B |
| D. | one of the above |
| Answer» C. lass B | |
| 55. |
The most commonly used transistor arrangement is ___________ arrangement |
| A. | ommon emitter |
| B. | ommon base |
| C. | ommon collector |
| D. | one of the above |
| Answer» B. ommon base | |
| 56. |
A tuned amplifier is used in ___________ applications |
| A. | adio frequency |
| B. | ow frequency |
| C. | udio frequency |
| D. | one of the above |
| Answer» B. ow frequency | |
| 57. |
Transistor biasing is done to keep ___________ in the circuit |
| A. | roper direct current |
| B. | roper alternating current |
| C. | he base current small |
| D. | ollector current small |
| Answer» B. roper alternating current | |
| 58. |
In a tansistor, IC = 100 mA and IE = 100.2 mA. The value of ß is ___________ |
| A. | 00 |
| B. | 0 |
| C. | bout 1 |
| D. | 00 |
| Answer» E. | |
| 59. |
Double tuned circuits are used in ___________ stages of a radio receiver |
| A. | F |
| B. | udio |
| C. | utput |
| D. | one of the above |
| Answer» B. udio | |
| 60. |
BC 147 transistor indicates that it is made of ___________ |
| A. | ermanium |
| B. | ilicon |
| C. | arbon |
| D. | one of the above |
| Answer» C. arbon | |
| 61. |
The base of a transistor is ___________ doped |
| A. | eavily |
| B. | oderately |
| C. | ightly |
| D. | one of the above |
| Answer» D. one of the above | |
| 62. |
In a pnp transistor, the current carriers are ___________ |
| A. | cceptor ions |
| B. | onor ions |
| C. | ree electrons |
| D. | oles |
| Answer» E. | |
| 63. |
A silicon transistor is biased with base resistor method. If ß=100, VBE =0.7 V, zero signal collector current IC = 1 mA and VCC = 6V , what is the value of the base resistor RB? |
| A. | 05 kΩ |
| B. | 30 kΩ |
| C. | 15 kΩ |
| D. | one of the above |
| Answer» C. 15 kΩ | |
| 64. |
In a transistor, the base current is about ___________ of emitter current |
| A. | 5% |
| B. | 0% |
| C. | 5% |
| D. | % |
| Answer» E. | |
| 65. |
IC = [a / (1 - a )] IB + [ / (1 - a )] |
| A. | CBO |
| B. | CEO |
| C. | C |
| D. | E |
| Answer» B. CEO | |
| 66. |
The dimensions of L/CR are that of ___________ |
| A. | arad |
| B. | enry |
| C. | hm |
| D. | one of the above |
| Answer» D. one of the above | |
| 67. |
The purpose of resistance in the emitter circuit of a transistor amplifier is to ___________ |
| A. | imit the maximum emitter current |
| B. | rovide base-emitter bias |
| C. | imit the change in emitter current |
| D. | one of the above |
| Answer» D. one of the above | |
| 68. |
If the maximum collector current due to signal alone is 3 mA, then zero signal collector current should be at least equal to ___________ |
| A. | mA |
| B. | mA |
| C. | mA |
| D. | mA |
| Answer» D. mA | |
| 69. |
The Q of a tuned amplifier is generally ___________ |
| A. | ess than 5 |
| B. | ess than 10 |
| C. | ore than 10 |
| D. | one of the above |
| Answer» D. one of the above | |
| 70. |
In a transistor if ß = 100 and collector current is 10 mA, then IE is ___________ |
| A. | 00 mA |
| B. | 0.1 mA |
| C. | 10 mA |
| D. | one of the above |
| Answer» C. 10 mA | |
| 71. |
The biasing circuit has a stability factor of 50. If due to temperature change, ICBO changes by 1 µA, then IC will change by ___________ |
| A. | 00 µA |
| B. | 5 µA |
| C. | 0 µA |
| D. | 0 µA |
| Answer» E. | |
| 72. |
Tuned class C amplifiers are used for RF signals of ___________ |
| A. | ow power |
| B. | igh power |
| C. | ery high power |
| D. | one of the above |
| Answer» E. | |
| 73. |
The Q of an LC circuit is given by ___________ |
| A. | pfr x R |
| B. | / 2pfrL |
| C. | pfrL / R |
| D. | 2/2pfrL |
| Answer» D. 2/2pfrL | |
| 74. |
The voltage gain in a transistor connected in ___________ arrangement is the highest |
| A. | ommon base |
| B. | ommon collector |
| C. | ommon emitter |
| D. | one of the above |
| Answer» D. one of the above | |
| 75. |
The power gain in a transistor connected in ___________ arrangement is the highest |
| A. | ommon emitter |
| B. | ommon base |
| C. | ommon collector |
| D. | one of the above |
| Answer» B. ommon base | |
| 76. |
The output impedance of a transistor connected in ___________ arrangement is the highest |
| A. | ommon emitter |
| B. | ommon collector |
| C. | ommon base |
| D. | one of the above |
| Answer» D. one of the above | |
| 77. |
The input impedance of a transistor connected in ___________ arrangement is the highest |
| A. | ommon emitter |
| B. | ommon collector |
| C. | ommon base |
| D. | one of the above |
| Answer» C. ommon base | |
| 78. |
The phase difference between the input and output voltages of a transistor connected in common collector arrangement is ___________ |
| A. | ° |
| B. | 0° |
| C. | 80° |
| D. | 70° |
| Answer» B. 0° | |
| 79. |
The voltage gain of a transistor connected in common collector arrangement is ___________ |
| A. | qual to 1 |
| B. | ore than 10 |
| C. | ore than 100 |
| D. | ess than 1 |
| Answer» E. | |
| 80. |
The phase difference between the input and output voltages in a common base arrangement is ___________ |
| A. | 80° |
| B. | 0° |
| C. | 70° |
| D. | ° |
| Answer» E. | |
| 81. |
The stability factor of a collector feedback bias circuit is ___________ that of base resistor bias. |
| A. | he same as |
| B. | ore than |
| C. | ess than |
| D. | one of the above |
| Answer» D. one of the above | |
| 82. |
In a transistor amplifier circuit VCE = VCB + ___________ |
| A. | BE |
| B. | VBE |
| C. | VBE |
| D. | one of the above |
| Answer» B. VBE | |
| 83. |
IC = aIE + ___________ |
| A. | B |
| B. | CEO |
| C. | CBO |
| D. | IB |
| Answer» D. IB | |
| 84. |
The Q of a tuned amplifier is 50. If the resonant frequency for the amplifier is 1000kHZ, then bandwidth is ___________%! |
| A. | 10kHz |
| B. | 40 kHz |
| C. | 30 kHz |
| D. | 20 kHz |
| Answer» E. | |
| 85. |
The stabilisation of operating point in potential divider method is provided by ___________%! |
| A. | RE consideration |
| B. | RC consideration |
| C. | VCC consideration |
| D. | None of the above |
| Answer» B. RC consideration | |
| 86. |
A class C amplifier always drives ___________ load%! |
| A. | A pure resistive |
| B. | A pure inductive |
| C. | A pure capacitive |
| D. | A resonant tank |
| Answer» E. | |
| 87. |
The power gain in a transistor connected in ___________ arrangement is the highest%! |
| A. | common base |
| B. | common collector |
| C. | common emitter |
| D. | none of the above |
| Answer» D. none of the above | |
| 88. |
If the resistance of a tuned circuit is increased, the Q of the circuit ___________%! |
| A. | recombine in the base |
| B. | recombine in the emitter |
| C. | pass through the base region to the collector |
| D. | none of the above |
| Answer» D. none of the above | |
| 89. |
The output impedance of a transistor connected in ___________ arrangement is the highest%! |
| A. | common emitter |
| B. | common base |
| C. | common collector |
| D. | none of the above |
| Answer» B. common base | |
| 90. |
If L/C ratio of a parallel LC circuit is increased, the Q of the circuit ___________%! |
| A. | Is increased |
| B. | Is decreased |
| C. | Remains the same |
| D. | None of the above |
| Answer» C. Remains the same | |
| 91. |
The input impedance of a transistor connected in ___________ arrangement is the highest%! |
| A. | common emitter |
| B. | common collector |
| C. | common base |
| D. | none of the above |
| Answer» D. none of the above | |
| 92. |
When either L or C is increased, the resonant frequency of LC circuit ___________%! |
| A. | Is decreased |
| B. | Is increased |
| C. | Remains the same |
| D. | None of the above |
| Answer» C. Remains the same | |
| 93. |
The phase difference between the input and output voltages of a transistor connected in common collector arrangement is ___________%! |
| A. | common emitter |
| B. | common collector |
| C. | common base |
| D. | none of the above |
| Answer» C. common base | |
| 94. |
The value of stability factor for a base resistor bias is ___________%! |
| A. | Remains the same |
| B. | Increases |
| C. | Decreases |
| D. | Insufficient data |
| Answer» D. Insufficient data | |
| 95. |
The value of VBE ___________%! |
| A. | Depends upon IC to moderate extent |
| B. | Is almost independent of IC |
| C. | Is strongly dependant on IC |
| D. | None of the above |
| Answer» C. Is strongly dependant on IC | |
| 96. |
The arrow in the symbol of a transistor indicates the direction of ___________%! |
| A. | electron current in the emitter |
| B. | electron current in the collector |
| C. | hole current in the emitter |
| D. | donor ion current |
| Answer» D. donor ion current | |
| 97. |
The relation between ß and a is ___________%! |
| A. | ß = 1 / (1 – a ) |
| B. | ß = (1 – a ) / a |
| C. | ß = a / (1 – a ) |
| D. | ß = a / (1 + a ) |
| Answer» D. ‚àö√º = a / (1 + a ) | |
| 98. |
A resonant circuit contains ___________ elements%! |
| A. | R and L only |
| B. | R and C only |
| C. | Only R |
| D. | L and C |
| Answer» E. | |
| 99. |
The most commonly used transistor arrangement is ___________ arrangement%! |
| A. | common emitter |
| B. | common base |
| C. | common collector |
| D. | none of the above |
| Answer» B. common base | |
| 100. |
In a transistor, the base current is about ___________ of emitter current%! |
| A. | 25% |
| B. | 20% |
| C. | 35% |
| D. | 5% |
| Answer» E. | |