MCQOPTIONS
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MCQOPTIONS
This section includes 236 Mcqs, each offering curated multiple-choice questions to sharpen your Electrical Engineering knowledge and support exam preparation. Choose a topic below to get started.
| 201. |
The operating point ___________ on the a.c. load line? |
| A. | Also line |
| B. | Does not lie |
| C. | May or may not lie |
| D. | Data insufficient |
| Answer» B. Does not lie | |
| 202. |
For germanium transistor amplifier, VCE should ___________ for faithful amplification? |
| A. | Be zero |
| B. | Be 0.2 V |
| C. | Not fall below 0.7 V |
| D. | None of the above |
| Answer» D. None of the above | |
| 203. |
The disadvantage of voltage divider bias is that it has ___________? |
| A. | High stability factor |
| B. | Low base current |
| C. | Many resistors |
| D. | None of the above |
| Answer» D. None of the above | |
| 204. |
In a transistor, signal is transferred from a ___________ circuit |
| A. | high resistance to low resistance |
| B. | low resistance to high resistance |
| C. | high resistance to high resistance |
| D. | low resistance to low resistance |
| Answer» C. high resistance to high resistance | |
| 205. |
If the temperature increases, the value of VCE ___________ |
| A. | Remains the same |
| B. | Is increased |
| C. | Is decreased |
| D. | None of the above |
| Answer» D. None of the above | |
| 206. |
The leakage current in a silicon transistor is about ___________ the leakage current in a germanium transistor |
| A. | One hundredth |
| B. | One tenth |
| C. | One thousandth |
| D. | One millionth |
| Answer» D. One millionth | |
| 207. |
In a npn transistor, ___________ are the minority carriers |
| A. | free electrons |
| B. | holes |
| C. | donor ions |
| D. | acceptor ions |
| Answer» C. donor ions | |
| 208. |
In a transistor ___________ |
| A. | IC = IE + IB |
| B. | IB = IC + IE |
| C. | IE = IC - IB |
| D. | IE = IC + IB |
| Answer» E. | |
| 209. |
For faithful amplification by a transistor circuit, the value of VBE should ___________ for a silicon transistor |
| A. | Be zero |
| B. | Be 0.01 V |
| C. | Not fall below 0.7 V |
| D. | Be between 0 V and 0.1 V |
| Answer» D. Be between 0 V and 0.1 V | |
| 210. |
At series resonance, the circuit offers ___________ impedance |
| A. | Zero |
| B. | Maximum |
| C. | Minimum |
| D. | None of the above |
| Answer» D. None of the above | |
| 211. |
A transistor is a ___________ operated device |
| A. | current |
| B. | voltage |
| C. | both voltage and current |
| D. | none of the above |
| Answer» B. voltage | |
| 212. |
In a parallel LC circuit, if the signal frequency is decreased below the resonant frequency, then ___________ |
| A. | XL decreases and XC increases |
| B. | XL increases and XC decreases |
| C. | Line current becomes minimum |
| D. | None of the above |
| Answer» B. XL increases and XC decreases | |
| 213. |
The disadvantage of base resistor method of transistor biasing is that it ___________ |
| A. | Is complicated |
| B. | Is sensitive to changes in ß |
| C. | Provides high stability |
| D. | None of the above |
| Answer» C. Provides high stability | |
| 214. |
When the temperature changes, the operating point is shifted due to . |
| A. | Change in ICBO |
| B. | Change in VCC |
| C. | Change in the values of circuit resistance |
| D. | None of the above |
| Answer» B. Change in VCC | |
| 215. |
In parallel resonance, there is ___________ |
| A. | Both voltage and current amplification |
| B. | Voltage amplifications |
| C. | Current amplification |
| D. | None of the above |
| Answer» D. None of the above | |
| 216. |
In a transistor if ß = 100 and collector current is 10 mA, then IE is ___________$ |
| A. | 100 mA |
| B. | 100.1 mA |
| C. | 110 mA |
| D. | none of the above |
| Answer» C. 110 mA | |
| 217. |
For faithful amplification by a transistor circuit, the value of VCE should ___________ for silicon transistor |
| A. | Not fall below 1 V |
| B. | Be zero |
| C. | Be 0.2 V |
| D. | None of the above |
| Answer» B. Be zero | |
| 218. |
At parallel resonance, the ratio L/C is ___________ |
| A. | Very large |
| B. | Zero |
| C. | Small |
| D. | None of the above |
| Answer» B. Zero | |
| 219. |
For frequencies below the resonant frequency , a parallel LC circuit behaves as a ___________ load |
| A. | Inductive |
| B. | Resistive |
| C. | Capacitive |
| D. | None of the above |
| Answer» B. Resistive | |
| 220. |
At parallel resonance, the phase angle between the applied voltage and circuit current is ___________ |
| A. | 90° |
| B. | 180° |
| C. | 0° |
| D. | None of the above |
| Answer» D. None of the above | |
| 221. |
The element that has the biggest size in a transistor is ___________ |
| A. | collector |
| B. | base |
| C. | emitter |
| D. | collector-base-junction |
| Answer» B. base | |
| 222. |
In the design of a biasing circuit, the value of collector load RC is determined by ___________ |
| A. | VCE consideration |
| B. | VBE consideration |
| C. | IB consideration |
| D. | None of the above |
| Answer» B. VBE consideration | |
| 223. |
A heat sink is generally used with a transistor to ___________ |
| A. | increase the forward current |
| B. | decrease the forward current |
| C. | compensate for excessive doping |
| D. | prevent excessive temperature rise |
| Answer» E. | |
| 224. |
If biasing is not done in an amplifier circuit, it results in ___________ |
| A. | Decrease in the base current |
| B. | Unfaithful amplification |
| C. | Excessive collector bias |
| D. | None of the above |
| Answer» C. Excessive collector bias | |
| 225. |
IC = [a / (1 - a )] IB + ___________ |
| A. | ICEO |
| B. | ICBO |
| C. | IC |
| D. | (1 - a ) IB |
| Answer» B. ICBO | |
| 226. |
The collector of a transistor is ___________ doped |
| A. | heavily |
| B. | moderately |
| C. | lightly |
| D. | none of the above |
| Answer» C. lightly | |
| 227. |
If the value of collector current IC increases, then the value of VCE ___________ |
| A. | Remains the same |
| B. | Decreases |
| C. | Increases |
| D. | None of the above |
| Answer» C. Increases | |
| 228. |
For proper amplification by a transistor circuit, the operating point should be located at the ___________ of the d.c. load line |
| A. | The end point |
| B. | Middle |
| C. | The maximum current point |
| D. | None of the above |
| Answer» C. The maximum current point | |
| 229. |
A silicon transistor is biased with base resistor method. If ß=100, VBE =0.7 V, zero signal collector current IC = 1 mA and VCC = 6V , what is the value of the base resistor RB?# |
| A. | 105 kΩ |
| B. | 530 kΩ |
| C. | 315 kΩ |
| D. | None of the above |
| Answer» C. 315 k≈í¬© | |
| 230. |
If Q of an LC circuit increases, then bandwidth ___________ |
| A. | Increases |
| B. | Decreases |
| C. | Remains the same |
| D. | Insufficient data |
| Answer» C. Remains the same | |
| 231. |
IC = ß IB + ___________# |
| A. | ICBO |
| B. | IC |
| C. | ICEO |
| D. | aIE |
| Answer» D. aIE | |
| 232. |
Transistor biasing represents ___________ conditions |
| A. | a.c. |
| B. | d.c. |
| C. | both a.c. and d.c. |
| D. | none of the above |
| Answer» C. both a.c. and d.c. | |
| 233. |
At series resonance, voltage across L is ___________ voltage across C |
| A. | Equal to but opposite in phase to |
| B. | Equal to but in phase with |
| C. | Greater than but in phase with |
| D. | Less than but in phase with |
| Answer» B. Equal to but in phase with | |
| 234. |
In the above question, what are the values of cut-off frequencies? |
| A. | 140 kHz , 60 kHz |
| B. | 1020 kHz , 980 kHz |
| C. | 1030 kHz , 970 kHz |
| D. | None of the above |
| Answer» C. 1030 kHz , 970 kHz | |
| 235. |
If the value of a is 0.9, then value of ß is ___________# |
| A. | 9 |
| B. | 0.9 |
| C. | 900 |
| D. | 90 |
| Answer» E. | |
| 236. |
A transistor is connected in CB mode. If it is not connected in CE mode with same bias voltages, the values of IE, IB and IC will ___________ |
| A. | remain the same |
| B. | increase |
| C. | decrease |
| D. | none of the above |
| Answer» B. increase | |