MCQOPTIONS
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MCQOPTIONS
This section includes 19 Mcqs, each offering curated multiple-choice questions to sharpen your Embedded Systems knowledge and support exam preparation. Choose a topic below to get started.
| 1. |
What does BEDO DRAM stand for? |
| A. | burst EDO DRAM |
| B. | buffer EDO DRAM |
| C. | BIBO EDO DRAM |
| D. | bilateral EDO DRAM |
| Answer» B. buffer EDO DRAM | |
| 2. |
Which of the following has a fast page mode RAM? |
| A. | burst mode |
| B. | page interleaving |
| C. | EDO memory |
| D. | page mode |
| Answer» D. page mode | |
| 3. |
Which mode offers the banking of memory in the DRAM interfacing technique? |
| A. | page mode |
| B. | basic DRAM interfacing |
| C. | page interleaving |
| D. | burst mode |
| Answer» D. burst mode | |
| 4. |
Which of the following mode of operation in the DRAM interfacing has a page boundary? |
| A. | burst mode |
| B. | EDO RAM |
| C. | page mode |
| D. | page interleaving |
| Answer» D. page interleaving | |
| 5. |
WHICH_OF_THE_FOLLOWING_MODE_OF_OPERATION_IN_THE_DRAM_INTERFACING_HAS_A_PAGE_BOUNDARY??$ |
| A. | burst mode |
| B. | EDO RAM |
| C. | page mode |
| D. | page interleaving |
| Answer» D. page interleaving | |
| 6. |
Which of the following has a fast page mode RAM?$ |
| A. | burst mode |
| B. | page interleaving |
| C. | EDO memory |
| D. | page mode |
| Answer» D. page mode | |
| 7. |
Which mode offers the banking of memory in the DRAM interfacing technique?$ |
| A. | page mode |
| B. | basic DRAM interfacing |
| C. | page interleaving |
| D. | burst mode |
| Answer» D. burst mode | |
| 8. |
What is the full form of BEDO DRAM in Dram Interfaces? |
| A. | burst EDO DRAM |
| B. | buffer EDO DRAM |
| C. | BIBO EDO DRAM |
| D. | bilateral EDO DRAM |
| Answer» B. buffer EDO DRAM | |
| 9. |
Which of the following is also known as hyper page mode enabled DRAM? |
| A. | page mode |
| B. | EDO DRAM |
| C. | burst EDO DRAM |
| D. | page interleaving |
| Answer» C. burst EDO DRAM | |
| 10. |
Which mode reduces the need for fast static RAMs? |
| A. | page mode |
| B. | page interleaving |
| C. | burst mode |
| D. | EDO memory |
| Answer» D. EDO memory | |
| 11. |
What is the maximum time that the RAS signal can be asserted in the page mode operation? |
| A. | 5 microseconds |
| B. | 10 microseconds |
| C. | 15 microseconds |
| D. | 20 microseconds |
| Answer» C. 15 microseconds | |
| 12. |
Which mode of operation selects an internal page of memory in the DRAM interfacing? |
| A. | page interleaving |
| B. | page mode |
| C. | burst mode |
| D. | EDO RAM |
| Answer» C. burst mode | |
| 13. |
Which of the following cycle is larger than the access time? |
| A. | write cycle |
| B. | set up time |
| C. | read cycle |
| D. | hold time |
| Answer» D. hold time | |
| 14. |
Which of the following can transfer up to 1.6 billion bytes per second? |
| A. | DRAM |
| B. | RDRAM |
| C. | EDO RAM |
| D. | SDRAM |
| Answer» C. EDO RAM | |
| 15. |
What is RDRAM? |
| A. | refresh DRAM |
| B. | recycle DRAM |
| C. | Rambus DRAM |
| D. | refreshing DRAM |
| Answer» D. refreshing DRAM | |
| 16. |
What is EDO RAM? |
| A. | extreme data operation |
| B. | extended direct operation |
| C. | extended data out |
| D. | extended DRAM out |
| Answer» D. extended DRAM out | |
| 17. |
Which interfacing method lowers the speed of the processor? |
| A. | basic DRAM interface |
| B. | page mode interface |
| C. | page interleaving |
| D. | burst mode interface |
| Answer» B. page mode interface | |
| 18. |
What is the duration for memory refresh to remain compatible? |
| A. | 20 microseconds |
| B. | 12 microseconds |
| C. | 15 microseconds |
| D. | 10 microseconds |
| Answer» D. 10 microseconds | |
| 19. |
In which pin does the data appear in the basic DRAM interfacing? |
| A. | dout pin |
| B. | din pin |
| C. | clock |
| D. | interrupt pin |
| Answer» B. din pin | |