MCQOPTIONS
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MCQOPTIONS
This section includes 14 Mcqs, each offering curated multiple-choice questions to sharpen your Vlsi knowledge and support exam preparation. Choose a topic below to get started.
| 1. |
In n channel MOSFET ______________ is constant. |
| A. | channel length |
| B. | channel width |
| C. | channel depth |
| D. | channel concentration |
| Answer» B. channel width | |
| 2. |
Overheating in device occurs due to less number of resistors per unit area. |
| A. | true |
| B. | false |
| Answer» C. | |
| 3. |
Which expression is true? |
| A. | charging time < discharging time |
| B. | charging time > discharging time |
| C. | charging time = discharging time |
| D. | charging time and discharging time are not related |
| Answer» C. charging time = discharging time | |
| 4. |
Depletion mode transistor should be large. |
| A. | true |
| B. | false |
| Answer» B. false | |
| 5. |
Enhancement mode MOSFETs are more commonly used as ____________ |
| A. | switches |
| B. | resistors |
| C. | buffers |
| D. | capacitors |
| Answer» B. resistors | |
| 6. |
Depletion mode MOSFETs are more commonly used as ____________ |
| A. | switches |
| B. | resistors |
| C. | buffers |
| D. | capacitors |
| Answer» C. buffers | |
| 7. |
Enhancement mode device acts as ____ switch, depletion mode acts as _____ switch. |
| A. | open, closed |
| B. | closed, open |
| C. | open, open |
| D. | close, close |
| Answer» B. closed, open | |
| 8. |
If the gate is given sufficiently large charge, electrons will be attracted to ____________ |
| A. | drain region |
| B. | channel region |
| C. | switch region |
| D. | bulk region |
| Answer» C. switch region | |
| 9. |
In N channel MOSFET which is the more negative of the elements? |
| A. | source |
| B. | gate |
| C. | drain |
| D. | source and drain |
| Answer» B. gate | |
| 10. |
Source in MOS transistors is doped with ______ material. |
| A. | n-type |
| B. | p-type |
| C. | n & p type |
| D. | none of the mentioned |
| Answer» B. p-type | |
| 11. |
Electrical charge flows from ____________ |
| A. | source to drain |
| B. | drain to source |
| C. | source to ground |
| D. | source to gate |
| Answer» B. drain to source | |
| 12. |
The gate region consists of ____________ |
| A. | insulating layer |
| B. | conducting layer |
| C. | lower metal layer |
| D. | p type layer |
| Answer» C. lower metal layer | |
| 13. |
In MOS transistors _______________ is used for their gate. |
| A. | metal |
| B. | silicon-di-oxide |
| C. | polysilicon |
| D. | gallium |
| Answer» D. gallium | |
| 14. |
MOS transistors consist of which of the following? |
| A. | semiconductor layer |
| B. | metal layer |
| C. | layer of silicon-di-oxide |
| D. | all of the mentioned |
| Answer» E. | |