MCQOPTIONS
Home
About Us
Contact Us
Bookmark
Saved Bookmarks
Testing Subject
General Aptitude
Logical and Verbal Reasoning
English Skills Ability
Technical Programming
Current Affairs
General Knowledge
Finance & Accounting
GATE (Mechanical Engineering)
Chemical Engineering
→
Vlsi
→
Characteristics Npn Bipolar Transistors
→
Overheating in device occurs due to less number of...
1.
Overheating in device occurs due to less number of resistors per unit area.
A.
true
B.
false
Answer» C.
Show Answer
Discussion
No Comment Found
Post Comment
Related MCQs
In n channel MOSFET ______________ is constant.
Overheating in device occurs due to less number of resistors per unit area.
Which expression is true?
Depletion mode transistor should be large.
Enhancement mode MOSFETs are more commonly used as ____________
Depletion mode MOSFETs are more commonly used as ____________
Enhancement mode device acts as ____ switch, depletion mode acts as _____ switch.
If the gate is given sufficiently large charge, electrons will be attracted to ____________
In N channel MOSFET which is the more negative of the elements?
Source in MOS transistors is doped with ______ material.
Reply to Comment
×
Name
*
Email
*
Comment
*
Submit Reply
Your experience on this site will be improved by allowing cookies. Read
Cookie Policy
Reject
Allow cookies
