Is generally greater in silicon than in germanium transistors

Depends largely on the emitter-base junction bias

Depends largely on the emitter doping

Increases with an increase in temperature

The current ICBO – McqOptions

1.	The current ICBO
A.	Is generally greater in silicon than in germanium transistors
B.	Depends largely on the emitter-base junction bias
C.	Depends largely on the emitter doping
D.	Increases with an increase in temperature
Answer» E.

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The current ICBO

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