A heavily doped n-typed semiconductor has the following data: Hole-electron mobility ratio: 0 4 Doping concentration: 4 2 108 atoms/m3 Intrinsic concentration: 1 5 104 atoms/m3 The ratio of conductance of the n-type semiconductor to that of the intrinsic semiconductor of same material and at the same temperature is given by

A heavily doped n-typed semiconductor has the following data: Hole-ele

1.	A heavily doped n-typed semiconductor has the following data: Hole-electron mobility ratio: 0 4 Doping concentration: 4 2 108 atoms/m3 Intrinsic concentration: 1 5 104 atoms/m3 The ratio of conductance of the n-type semiconductor to that of the intrinsic semiconductor of same material and at the same temperature is given by
A.	0 00005
B.	2,000
C.	10,000
D.	20,000
Answer» C. 10,000

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A heavily doped n-typed semiconductor has the following data: Hole-electron mobility ratio: 0 4 Doping concentration: 4 2 108 atoms/m3 Intrinsic concentration: 1 5 104 atoms/m3 The ratio of conductance of the n-type semiconductor to that of the intrinsic semiconductor of same material and at the same temperature is given by

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