The change in barrier potential of silicon p-n junction with temperatu

1.	The change in barrier potential of silicon p-n junction with temperature is
A.	0 025 volts per degree C
B.	0 250 volts per degree C
C.	0 030 volts per degree C
D.	0 014 volts per degree C
Answer» B. 0 250 volts per degree C

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The change in barrier potential of silicon p-n junction with temperature is

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