Match List-I (Diode type) with List-II (Important properties) and select the correct answer using the code given below the lists List-I (a) Zener Diode (b) Gunn Diode (c) Schottky Diode (d) Tunnel Diode List-II 1. Negative resistance device fabricated using semiconductors like Si, Ga, As, Ge etc. can be operated at a frequency of 10 GHz. 2. Quantum mechanical tunnelling with very thin depletions layers under reverse bias operated as a reference voltage sources.3. Negative conductance device, operates on the principle of transfer of electron from one region of conduction band to another. 4. Metal-semiconductor diode, have rectification properties. Codes:

Match List-I (Diode type) with List-II (Important properties) and sele

1.	Match List-I (Diode type) with List-II (Important properties) and select the correct answer using the code given below the lists List-I (a) Zener Diode (b) Gunn Diode (c) Schottky Diode (d) Tunnel Diode List-II 1. Negative resistance device fabricated using semiconductors like Si, Ga, As, Ge etc. can be operated at a frequency of 10 GHz. 2. Quantum mechanical tunnelling with very thin depletions layers under reverse bias operated as a reference voltage sources.3. Negative conductance device, operates on the principle of transfer of electron from one region of conduction band to another. 4. Metal-semiconductor diode, have rectification properties. Codes:
A.	2431
B.	1342
C.	2341
D.	1432
Answer» D. 1432

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