In the given circuit, D1 is an ideal germanium diode and D2 is a silicon diode having its cut-in voltage as 0 7 V, forward resistance as 20 and reverse saturation current (Is) as 10 nA. What are the values of I and V for this circuit, respectively?

In the given circuit, D1 is an ideal germanium diode and D2 is a silic

1.	In the given circuit, D1 is an ideal germanium diode and D2 is a silicon diode having its cut-in voltage as 0 7 V, forward resistance as 20 and reverse saturation current (Is) as 10 nA. What are the values of I and V for this circuit, respectively?
A.	60 mA and 0 V
B.	50 mA and 0 V
C.	53 mA and 0 7 V
D.	44 mA and 1 58 V
Answer» B. 50 mA and 0 V

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In the given circuit, D1 is an ideal germanium diode and D2 is a silicon diode having its cut-in voltage as 0 7 V, forward resistance as 20 and reverse saturation current (Is) as 10 nA. What are the values of I and V for this circuit, respectively?

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