If P is passivation, Q is n-well implant, R is metallization and S is source/drain diffusion, then the order in which they are carried out in a standard n-well CMOS fabrication process is

If P is passivation, Q is n-well implant, R is metallization and S is

1.	If P is passivation, Q is n-well implant, R is metallization and S is source/drain diffusion, then the order in which they are carried out in a standard n-well CMOS fabrication process is
A.	S - R - Q - P
B.	R - P - S - Q
C.	Q - S - R - P
D.	P - Q - R - S
Answer» C. Q - S - R - P

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If P is passivation, Q is n-well implant, R is metallization and S is source/drain diffusion, then the order in which they are carried out in a standard n-well CMOS fabrication process is

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