Assuming an operating temperature T = 300 K and corresponding VT = 26 mV, what is the change in semiconductor silicon diode forward voltage VD to produce a 10: 1 change in diode current ID, while operating in the forward bias region (

Assuming an operating temperature T = 300 K and corresponding VT = 26

1.	Assuming an operating temperature T = 300 K and corresponding VT = 26 mV, what is the change in semiconductor silicon diode forward voltage VD to produce a 10: 1 change in diode current ID, while operating in the forward bias region (
A.	60 mV
B.	120 mV
C.	180 mV
D.	240 mV
Answer» C. 180 mV

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Assuming an operating temperature T = 300 K and corresponding VT = 26 mV, what is the change in semiconductor silicon diode forward voltage VD to produce a 10: 1 change in diode current ID, while operating in the forward bias region (

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