A silicon semiconductor sample at T = 300 K is doped with phosphorus atoms at a concentrations of 10

A silicon semiconductor sample at T = 300 K is doped with phosphorus a

1.	A silicon semiconductor sample at T = 300 K is doped with phosphorus atoms at a concentrations of 10
A.	0.3 eV
B.	0.2 eV
C.	0.1 eV
D.	0.4 eV
Answer» B. 0.2 eV

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A silicon semiconductor sample at T = 300 K is doped with phosphorus atoms at a concentrations of 10

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