A p-n junction has a built-in potential of 0 8 V. The depletion layer width at a reverse bias of 1 2 V is 2 m. For a reverse bias of 7 2 V, the depletion layer width will be

A p-n junction has a built-in potential of 0 8 V. The depletion layer

1.	A p-n junction has a built-in potential of 0 8 V. The depletion layer width at a reverse bias of 1 2 V is 2 m. For a reverse bias of 7 2 V, the depletion layer width will be
A.	4 m
B.	4 9 m
C.	8 m
D.	12 m
Answer» B. 4 9 m

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A p-n junction has a built-in potential of 0 8 V. The depletion layer width at a reverse bias of 1 2 V is 2 m. For a reverse bias of 7 2 V, the depletion layer width will be

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