MCQOPTIONS
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This section includes 14 Mcqs, each offering curated multiple-choice questions to sharpen your Vlsi knowledge and support exam preparation. Choose a topic below to get started.
| 1. |
Figure of merit does not depend on saturation velocity. |
| A. | true |
| B. | false |
| Answer» C. | |
| 2. |
In bipolar transistor, transconductance is _______ to collector current. |
| A. | directly related |
| B. | inversely related |
| C. | exponentially related |
| D. | not related |
| Answer» B. inversely related | |
| 3. |
Transconductance value is same in linear and saturation region. |
| A. | true |
| B. | false |
| Answer» B. false | |
| 4. |
For finding transconductance which is kept as constant? |
| A. | Vss |
| B. | Vdd |
| C. | Vds |
| D. | Vgs |
| Answer» D. Vgs | |
| 5. |
The device turns off when |
| A. | Vlow > Vt |
| B. | Vlow < Vt |
| C. | Vhigh < Vt |
| D. | Vhigh > Vt |
| Answer» C. Vhigh < Vt | |
| 6. |
To improve the switching speed |
| A. | voltage swing should be increased |
| B. | voltage swing should be decreased |
| C. | gate length should be increased |
| D. | gate thickness should be increased |
| Answer» B. voltage swing should be decreased | |
| 7. |
The output conductance value in cut off region is |
| A. | Vds |
| B. | 1 |
| C. | cannot be determined |
| D. | 0 |
| Answer» E. | |
| 8. |
Switching speed does not depend on |
| A. | gate length |
| B. | gate voltage |
| C. | carrier mobility |
| D. | doping level |
| Answer» E. | |
| 9. |
Transconductance is not influenced by transistor size. |
| A. | true |
| B. | false |
| Answer» C. | |
| 10. |
GaAs device has |
| A. | high bandwidth |
| B. | high transconductance |
| C. | low gate capacitance |
| D. | all of the mentioned |
| Answer» E. | |
| 11. |
The transconductance value in cut off region is |
| A. | Vds |
| B. | 1 |
| C. | cannot be determined |
| D. | 0 |
| Answer» E. | |
| 12. |
Output conductance gives the slope of linear characteristics. |
| A. | true |
| B. | false |
| Answer» C. | |
| 13. |
Transconductance gives the relationship of |
| A. | Ids and Vds |
| B. | Vds and Vgs |
| C. | Ids and Vgs |
| D. | Ids and d |
| Answer» D. Ids and d | |
| 14. |
Gain of MESFET is _______ to transconductance. |
| A. | directly proportional |
| B. | indirectly proportional |
| C. | exponentially dependent |
| D. | does not depend on |
| Answer» B. indirectly proportional | |