MCQOPTIONS
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MCQOPTIONS
This section includes 13 Mcqs, each offering curated multiple-choice questions to sharpen your Vlsi knowledge and support exam preparation. Choose a topic below to get started.
| 1. |
WHICH_HAS_GREATER_INTRINIC_RESISTIVITY??$ |
| A. | silicon |
| B. | gallium arsenide |
| C. | gallium |
| D. | silicon and gallium |
| Answer» C. gallium | |
| 2. |
Which has low breakdown field?$ |
| A. | silicon |
| B. | GaAs |
| C. | gallium |
| D. | silicon and gallium |
| Answer» B. GaAs | |
| 3. |
Silicon has greater density than GaAs.$ |
| A. | true |
| B. | false |
| Answer» C. | |
| 4. |
Which has greater effective electron mass? |
| A. | silicon |
| B. | GaAs |
| C. | free electron |
| D. | gallium |
| Answer» B. GaAs | |
| 5. |
In GaAs, ______ has more intrinsic mobilit? |
| A. | electron |
| B. | holes |
| C. | proton |
| D. | neutron |
| Answer» B. holes | |
| 6. |
_______ can be used as light emitters |
| A. | forward biased pn junction |
| B. | reverse baised pn junction |
| C. | forward baised pnp junction |
| D. | reverse baised pnp junction |
| Answer» B. reverse baised pn junction | |
| 7. |
In gallium arsenide, wider operating temperature range is possible. |
| A. | true |
| B. | false |
| Answer» B. false | |
| 8. |
In gallium arsenide, radiation resistance is |
| A. | stronger |
| B. | weaker |
| C. | absent |
| D. | very weak |
| Answer» B. weaker | |
| 9. |
Larger energy bandgap _____ parasitic capacitances |
| A. | increases |
| B. | decreases |
| C. | maintains constant |
| D. | does not affect |
| Answer» C. maintains constant | |
| 10. |
Saturated drift velocity of gallium is _______ to that of silicon |
| A. | greater |
| B. | lesser |
| C. | approximately same |
| D. | does not depend on |
| Answer» D. does not depend on | |
| 11. |
Electron mobility of gallium arsenide is _______ that of silicon |
| A. | greater than |
| B. | lesser than |
| C. | same as |
| D. | does not depend on |
| Answer» B. lesser than | |
| 12. |
The GaAs structure has upto _______ metal |
| A. | two-layer |
| B. | three-layer |
| C. | four-layer |
| D. | one-layer |
| Answer» D. one-layer | |
| 13. |
The GaAs fabrication has _________ gate geometry |
| A. | less than one micron |
| B. | less than two micron |
| C. | more than one micron |
| D. | more than two micron |
| Answer» B. less than two micron | |