MCQOPTIONS
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MCQOPTIONS
This section includes 9 Mcqs, each offering curated multiple-choice questions to sharpen your Power Electronics knowledge and support exam preparation. Choose a topic below to get started.
| 1. |
WHICH_OF_THE_FOLLOWING_IS_TRUE_IN_CASE_OF_AN_UNBIASED_P-N_JUNCTION_DIODE??$ |
| A. | Diffusion does not take place |
| B. | Diffusion of electrons & holes goes on infinitely |
| C. | There is zero electrical potential across the junctions |
| D. | Charges establish an electric field across the junctions |
| Answer» E. | |
| 2. |
Which_of_the_following_is_true_in_case_of_a_forward_biased_p-n_junction_diode?$ |
| A. | The positive terminal of the battery sucks electrons from the p-region |
| B. | The positive terminal of the battery injects electrons into the p-region |
| C. | The negative terminal of the battery sucks electrons from the p-region |
| D. | None of the above mentioned statements are true |
| Answer» B. The positive terminal of the battery injects electrons into the p-region | |
| 3. |
When a physical contact between a p-region & n-region is established which of the following is most likely to take place? |
| A. | Electrons from N-region diffuse to P-region |
| B. | Holes from P-region diffuse to N-region |
| C. | Both of the above mentioned statements are true |
| D. | Nothing will happen |
| Answer» D. Nothing will happen | |
| 4. |
Lets assume that the doping density in the p-region is 10-9 cm-3 & in the n-region is 10-17cm-3, as such the p-n junction so formed would be termed as a |
| A. | p<sup>–</sup> n<sup>–</sup> |
| B. | p<sup>+</sup> n<sup>–</sup> |
| C. | p<sup>–</sup> n<sup>+</sup> |
| D. | p<sup>+</sup> n<sup>+</sup> |
| Answer» C. p<sup>‚Äö√Ñ√∂‚àö√ë‚àö¬®</sup> n<sup>+</sup> | |
| 5. |
Which of the below mentioned statements is false regarding a p-n junction diode? |
| A. | Diode are uncontrolled devices |
| B. | Diodes are rectifying devices |
| C. | Diodes are unidirectional devices |
| D. | Diodes have three terminals |
| Answer» E. | |
| 6. |
The n-region has a greater concentration of _________ as compared to the p-region in a P-N junction diode. |
| A. | holes |
| B. | electrons |
| C. | both holes & electrons |
| D. | phonons |
| Answer» C. both holes & electrons | |
| 7. |
In the p & n regions of the p-n junction the _________ & the ___________ are the majority charge carriers respectively. |
| A. | holes, holes |
| B. | electrons, electrons |
| C. | holes, electrons |
| D. | electrons, holes |
| Answer» D. electrons, holes | |
| 8. |
A p-type semiconductor material is doped with ____________ impurities whereas a n-type semiconductor material is doped with __________ impurities |
| A. | acceptor, donor |
| B. | acceptor, acceptor |
| C. | donor, donor |
| D. | donor, acceptor |
| Answer» B. acceptor, acceptor | |
| 9. |
The p-region has a greater concentration of __________ as compared to the n-region in a P-N junction. |
| A. | holes |
| B. | electrons |
| C. | both holes & electrons |
| D. | phonons |
| Answer» B. electrons | |