MCQOPTIONS
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MCQOPTIONS
This section includes 11 Mcqs, each offering curated multiple-choice questions to sharpen your Vlsi knowledge and support exam preparation. Choose a topic below to get started.
| 1. |
What is Piranha Solution? |
| A. | It is a 3:1 to 5:1 mix of nitric acid and hydrogen peroxide that is used to develop the oxide layer on silicon substrate |
| B. | It is a 3:1 to 5:1 mix of sulphuric acid and hydrofluoric acid that is used to clean silicon wafers removing organic and metal contaminants or photo resist after metal patterning |
| C. | It is a 3:1 to 5:1 mix of sulphuric acid and hydrogen peroxide that is used to grow the oxide layer on the silicon |
| D. | It is a 3:1 to 5:1 mix of sulphuric acid and hydrogen peroxide that is used to clean wafers of organic and metal contaminants or photo resist after metal patterning |
| Answer» E. | |
| 2. |
Chemical Mechanical Polishing is used to ___________ |
| A. | Remove silicon oxide |
| B. | Remove silicon nitride and pad oxide |
| C. | Remove polysilicon gate layer |
| D. | Reduce the size of the layout |
| Answer» C. Remove polysilicon gate layer | |
| 3. |
The process by which Aluminium is grown over the entire wafer, also filling the contact cuts is? |
| A. | Sputtering |
| B. | Chemical vapour deposition |
| C. | Epitaxial growth |
| D. | Ion Implantation |
| Answer» B. Chemical vapour deposition | |
| 4. |
To grow the polysilicon gate layer, which of the following chemical is used for chemical vapour deposition? |
| A. | Silicon Nitride(Si<sub>3</sub>N<sub>4</sub>) |
| B. | Silane gas(SiH<sub>4</sub>) |
| C. | Silicon oxide |
| D. | None of the mentioned |
| Answer» C. Silicon oxide | |
| 5. |
The dopants are introduced in the active areas of silicon by using which process? |
| A. | Diffusion process |
| B. | Ion Implantation process |
| C. | Chemical Vapour Deposition |
| D. | Either Diffusion or Ion Implantation Process |
| Answer» E. | |
| 6. |
The chemical used for shielding the active areas to achieve selective oxide growth is? |
| A. | Silver Nitride |
| B. | Silicon Nitride |
| C. | Hydrofluoric acid |
| D. | Polysilicon |
| Answer» C. Hydrofluoric acid | |
| 7. |
The isolated active areas are created by technique known as ___________ |
| A. | Etched field-oxide isolation |
| B. | Local Oxidation of Silicon |
| C. | Etched field-oxide isolation or Local Oxidation of Silicon |
| D. | None of the mentioned |
| Answer» D. None of the mentioned | |
| 8. |
The ______ is used to reduce the resistivity of poly silicon. |
| A. | Photo resist |
| B. | Etching |
| C. | Doping impurities |
| D. | None of the mentioned |
| Answer» D. None of the mentioned | |
| 9. |
Positive photo resists are used more than negative photo resists because ___________ |
| A. | Negative photo resists are more sensitive to light, but their photo lithographic resolution is not as high as that of the positive photo resists |
| B. | Positive photo resists are more sensitive to light, but their photo lithographic resolution is not as high as that of the negative photo resists |
| C. | Negative photo resists are less sensitive to light |
| D. | Positive photo resists are less sensitive to light |
| Answer» B. Positive photo resists are more sensitive to light, but their photo lithographic resolution is not as high as that of the negative photo resists | |
| 10. |
Silicon oxide is patterned on a substrate using ____________ |
| A. | Physical lithography |
| B. | Photolithography |
| C. | Chemical lithography |
| D. | Mechanical lithography |
| Answer» C. Chemical lithography | |
| 11. |
What is Lithography? |
| A. | Process used to transfer a pattern to a layer on the chip |
| B. | Process used to develop an oxidation layer on the chip |
| C. | Process used to develop a metal layer on the chip |
| D. | Process used to produce the chip |
| Answer» B. Process used to develop an oxidation layer on the chip | |