MCQOPTIONS
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This section includes 8 Mcqs, each offering curated multiple-choice questions to sharpen your Power Electronics knowledge and support exam preparation. Choose a topic below to get started.
| 1. |
THE_BASIC_ADVANTAGE_OF_THE_CMOS_TECHNOLOGY_IS_THAT?$ |
| A. | It is easily available |
| B. | It has small size |
| C. | It has lower power consumption |
| D. | It has better switching capabilities |
| Answer» D. It has better switching capabilities | |
| 2. |
The N-channel MOSFET is considered better than the P-channel MOSFET due to its$ |
| A. | low noise levels |
| B. | TTL compatibility |
| C. | lower input impedance |
| D. | faster operation |
| Answer» E. | |
| 3. |
How does the MOSFET differ from the JFET? |
| A. | JFET has a p-n junction |
| B. | They are both the same |
| C. | JFET is small in size |
| D. | MOSFET has a base terminal |
| Answer» B. They are both the same | |
| 4. |
For a MOSFET Vgs=3V, Idss=5A, and Id=2A. Find the pinch of voltage Vp |
| A. | 4.08 |
| B. | 8.16 |
| C. | 16.32 |
| D. | 0V |
| Answer» C. 16.32 | |
| 5. |
Consider an ideal MOSFET. If Vgs = 0V, then Id = ? |
| A. | Zero |
| B. | Maximum |
| C. | Id(on) |
| D. | Idd |
| Answer» B. Maximum | |
| 6. |
Which among the following devices is the most suited for high frequency applications? |
| A. | BJT |
| B. | IGBT |
| C. | MOSFET |
| D. | SCR |
| Answer» D. SCR | |
| 7. |
At turn-on the initial delay or turn on delay is the time required for the |
| A. | input inductance to charge to the threshold value |
| B. | input capacitance to charge to the threshold value |
| C. | input inductance to discharge to the threshold value |
| D. | input capacitance to discharge to the threshold value |
| Answer» C. input inductance to discharge to the threshold value | |
| 8. |
In the output characteristics of a MOSFET with low values of Vds, the value of the on-state resistance is |
| A. | Vds/Ig |
| B. | Vds/Id |
| C. | 0 |
| D. | ‚àû |
| Answer» C. 0 | |