MCQOPTIONS
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MCQOPTIONS
This section includes 64 Mcqs, each offering curated multiple-choice questions to sharpen your Digital Circuits knowledge and support exam preparation. Choose a topic below to get started.
| 1. |
MOS is being used in ___________ |
| A. | LSI |
| B. | VLSI |
| C. | MSI |
| D. | Both LSI and VLSI |
| Answer» E. | |
| 2. |
Critical defects per unit chip area are ________ for a MOS transistor. |
| A. | High |
| B. | Low |
| C. | Neutral |
| D. | Very High |
| Answer» C. Neutral | |
| 3. |
Find the sequence of steps involved in fabrication of poly silicon gate MOSFET? |
| A. | 1->5->3->4->2->6 |
| B. | 1->3->4->2->5->6 |
| C. | 1->5->4->3->2->6 |
| D. | 1->4->2->5->3->6View Answer |
| Answer» B. 1->3->4->2->5->6 | |
| 4. |
A technique used to reduce the magnitude of threshold voltage of MOSFET is the ___________ |
| A. | Use of complementary MOSFET |
| B. | Use of Silicon nitride |
| C. | Using thin film technology |
| D. | Increasing potential of the channel |
| Answer» C. Using thin film technology | |
| 5. |
Which of the following plays an important role in improving the device performance of MOSFET? |
| A. | Dielectric constant |
| B. | Threshold voltage |
| C. | Power supply voltage |
| D. | Gate to drain voltage |
| Answer» C. Power supply voltage | |
| 6. |
The full form of MOS is ___________ |
| A. | Metal oxide semiconductor |
| B. | Metal oxygen semiconductor |
| C. | Metallic oxide semiconductor |
| D. | Metallic oxygen semiconductor |
| Answer» B. Metal oxygen semiconductor | |
| 7. |
CMOS digital logic family uses |
| A. | unipolar transistors |
| B. | bipolar transistors |
| C. | high level transistors |
| D. | low level transistors |
| Answer» B. bipolar transistors | |
| 8. |
MOSFET is also called |
| A. | TTL |
| B. | MOS |
| C. | RTL |
| D. | CMOS |
| Answer» C. RTL | |
| 9. |
Unwanted signals in image is called |
| A. | error |
| B. | damage |
| C. | noise |
| D. | delay |
| Answer» D. delay | |
| 10. |
Term being used for loading is |
| A. | fan |
| B. | fan in |
| C. | fan out |
| D. | out come |
| Answer» D. out come | |
| 11. |
1 in the logic circuit represents |
| A. | negative edge |
| B. | positive edge |
| C. | black |
| D. | white |
| Answer» C. black | |
| 12. |
FET transistors are |
| A. | unipolar |
| B. | bipolar |
| C. | high |
| D. | low |
| Answer» B. bipolar | |
| 13. |
Maximum noise is referred to as |
| A. | error |
| B. | damage |
| C. | noise |
| D. | noise margin |
| Answer» E. | |
| 14. |
TTL stands for |
| A. | Transmission transistor logic |
| B. | Transistor transmission logic |
| C. | Transistor-transistor logic |
| D. | Transistor transistor league |
| Answer» D. Transistor transistor league | |
| 15. |
BJT stands for |
| A. | bipolar junction transmission |
| B. | bipolar junction transistor |
| C. | beside junction transistor |
| D. | beside junction transmission |
| Answer» B. bipolar junction transistor | |
| 16. |
Unit used for power dissipation is |
| A. | nW |
| B. | ns |
| C. | mW |
| D. | mm |
| Answer» D. mm | |
| 17. |
Standard parameter value of Voh in noise margin is |
| A. | 2.1V |
| B. | 2.2V |
| C. | 2.3V |
| D. | 2.4V |
| Answer» E. | |
| 18. |
RTL stands for |
| A. | Resistor transistor logic |
| B. | Resistor transistor league |
| C. | Resistance transistor logic |
| D. | Resistor transmission logic |
| Answer» B. Resistor transistor league | |
| 19. |
ECL stands for |
| A. | Emitter collector league |
| B. | Emitter coupled league |
| C. | Emitter collector logic |
| D. | Emitter coupled logic |
| Answer» E. | |
| 20. |
Low input of NAND produces output as |
| A. | low |
| B. | mid |
| C. | high |
| D. | both a and b |
| Answer» D. both a and b | |
| 21. |
Noise margin is calculated with the difference of |
| A. | Voh+Vih |
| B. | Vh-Vi |
| C. | Voh-Vih |
| D. | Voh*Vih |
| Answer» D. Voh*Vih | |
| 22. |
TTL digital logic family uses |
| A. | unipolar transistors |
| B. | bipolar transistors |
| C. | high level transistors |
| D. | low level transistors |
| Answer» C. high level transistors | |
| 23. |
Unit of noise margin is |
| A. | V |
| B. | I |
| C. | S |
| D. | T |
| Answer» B. I | |
| 24. |
Power formula is |
| A. | P=IxV |
| B. | P=I+V |
| C. | P=I-V |
| D. | P=I/V |
| Answer» B. P=I+V | |
| 25. |
IC stands for |
| A. | integral circuit |
| B. | integrated circuit |
| C. | integrated chip |
| D. | integral chip |
| Answer» C. integrated chip | |
| 26. |
Bipolar transistors work on |
| A. | electrons |
| B. | poles |
| C. | neutrons |
| D. | both a and b |
| Answer» E. | |
| 27. |
Basic building block of digital circuit is/are |
| A. | NAND |
| B. | NOR |
| C. | AND |
| D. | both a and b |
| Answer» E. | |
| 28. |
Bipolar Junction Transistor (BJT) can be either |
| A. | NPN junction |
| B. | PNP junction |
| C. | SIS junction |
| D. | both a and b |
| Answer» E. | |
| 29. |
Emitter current is given by |
| A. | collector*base |
| B. | collector/base |
| C. | collector + base |
| D. | collector-base |
| Answer» D. collector-base | |
| 30. |
Voltage between Vcc and Voh is referred as |
| A. | low level state |
| B. | high level state |
| C. | mid-level state |
| D. | transition |
| Answer» C. mid-level state | |
| 31. |
0 in the logic circuit represents |
| A. | negative edge |
| B. | positive edge |
| C. | black |
| D. | white |
| Answer» B. positive edge | |
| 32. |
A standard TTL NAND gate uses a supply voltage of |
| A. | 5V |
| B. | 10V |
| C. | 4V |
| D. | None |
| Answer» C. 4V | |
| 33. |
Standard parameter value of Vol in noise margin is |
| A. | 0.1V |
| B. | 0.2V |
| C. | 0.3V |
| D. | 0.4V |
| Answer» E. | |
| 34. |
FET stands for |
| A. | field effect transmission |
| B. | field effect transistor |
| C. | field emitter transistor |
| D. | field emitter transmission |
| Answer» C. field emitter transistor | |
| 35. |
Standard parameter value of Vih in noise margin is |
| A. | 1V |
| B. | 2V |
| C. | 3V |
| D. | 4V |
| Answer» C. 3V | |
| 36. |
MOS is being used in |
| A. | LSI |
| B. | VLSI |
| C. | MSI |
| D. | both a and b |
| Answer» E. | |
| 37. |
Standard value of Vil in noise margin is |
| A. | 0.2V |
| B. | 0.3V |
| C. | 0.5V |
| D. | 0.8V |
| Answer» E. | |
| 38. |
Forward biased transistor has voltage greater than |
| A. | 0.3 |
| B. | 0.5 |
| C. | 0.6 |
| D. | 0.9 |
| Answer» D. 0.9 | |
| 39. |
Any high input of NOR produces output as |
| A. | low |
| B. | mid |
| C. | high |
| D. | both a and b |
| Answer» B. mid | |
| 40. |
For proper operation gate requires |
| A. | input |
| B. | current |
| C. | voltage |
| D. | output |
| Answer» C. voltage | |
| 41. |
Fan-out is calculated from the ratio of |
| A. | input of current needed for gate |
| B. | current available in output |
| C. | both a and b |
| D. | None |
| Answer» C. both a and b | |
| 42. |
Vol represents the |
| A. | low level |
| B. | high level |
| C. | mid-level |
| D. | transition |
| Answer» B. high level | |
| 43. |
Modification of DTL is |
| A. | TTL |
| B. | MOS |
| C. | RTL |
| D. | CMOS |
| Answer» B. MOS | |
| 44. |
The First digital Integrated circuits family that was introduced commercially is |
| A. | TTL |
| B. | MOS |
| C. | RTL |
| D. | CMOS |
| Answer» D. CMOS | |
| 45. |
All high nputs of NAND gate produces |
| A. | low output |
| B. | medium output |
| C. | high output |
| D. | both a and b |
| Answer» B. medium output | |
| 46. |
The maximum number of inputs connected to the gate is called |
| A. | fan |
| B. | fan in |
| C. | fan out |
| D. | out come |
| Answer» D. out come | |
| 47. |
CMOS stands for |
| A. | complementary material oxide semiconductor |
| B. | complementary metal oxide semiconductor |
| C. | complex metal oxide semiconductor |
| D. | complex material oxide semiconductor |
| Answer» C. complex metal oxide semiconductor | |
| 48. |
Exceeding the maximum load on circuit causes |
| A. | malfunction |
| B. | high performance |
| C. | low performance |
| D. | out come |
| Answer» B. high performance | |
| 49. |
Bipolar are constructed with |
| A. | germanium |
| B. | silicon |
| C. | copper |
| D. | both a and b |
| Answer» E. | |
| 50. |
Delay is measured with the unit |
| A. | nW |
| B. | ns |
| C. | mW |
| D. | mm |
| Answer» C. mW | |