MCQOPTIONS
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MCQOPTIONS
This section includes 8 Mcqs, each offering curated multiple-choice questions to sharpen your Vlsi knowledge and support exam preparation. Choose a topic below to get started.
| 1. |
The n-MOSFET is working as accumulation mode when: |
| A. | Gate is applied with positive voltage |
| B. | Gate is grounded |
| C. | Gate is applied with negative voltage |
| D. | Gate is connected to source |
| Answer» D. Gate is connected to source | |
| 2. |
The low voltage on the gate of p-MOSFET forms: |
| A. | Channel of negative carriers |
| B. | Channel is not formed |
| C. | Channel is clipped |
| D. | Channel of positive carriers |
| Answer» E. | |
| 3. |
The oxide layer formed in the MOSFET is: |
| A. | Metal oxide |
| B. | Silicon dioxide |
| C. | Poly Silicon oxide |
| D. | Oxides of Non metals |
| Answer» C. Poly Silicon oxide | |
| 4. |
The correct representation of p-MOSFET is: |
| A. | <a href="https://www.sanfoundry.com/wp-content/uploads/2017/05/vlsi-questions-answers-metal-oxide-semiconductor-transistor-1-q6a.png"><img alt="Representation of p-MOSFET - option a" class="alignnone size-full wp-image-162152" height="72" src="https://www.sanfoundry.com/wp-content/uploads/2017/05/vlsi-questions-answers-metal-oxide-semiconductor-transistor-1-q6a.png" width="68"/></a> |
| B. | <a href="https://www.sanfoundry.com/wp-content/uploads/2017/05/vlsi-questions-answers-metal-oxide-semiconductor-transistor-1-q6b.png"><img alt="Representation of p-MOSFET - option b" class="alignnone size-full wp-image-162153" height="77" src="https://www.sanfoundry.com/wp-content/uploads/2017/05/vlsi-questions-answers-metal-oxide-semiconductor-transistor-1-q6b.png" width="57"/></a> |
| C. | <a href="https://www.sanfoundry.com/wp-content/uploads/2017/05/vlsi-questions-answers-metal-oxide-semiconductor-transistor-1-q6c.png"><img alt="Representation of p-MOSFET - option c" class="alignnone size-full wp-image-162154" height="66" src="https://www.sanfoundry.com/wp-content/uploads/2017/05/vlsi-questions-answers-metal-oxide-semiconductor-transistor-1-q6c.png" width="61"/></a> |
| D. | <a href="https://www.sanfoundry.com/wp-content/uploads/2017/05/vlsi-questions-answers-metal-oxide-semiconductor-transistor-1-q6d.png"><img alt="Representation of p-MOSFET - option d" class="alignnone size-full wp-image-162155" height="72" src="https://www.sanfoundry.com/wp-content/uploads/2017/05/vlsi-questions-answers-metal-oxide-semiconductor-transistor-1-q6d.png" width="70"/></a> |
| Answer» C. <a href="https://www.sanfoundry.com/wp-content/uploads/2017/05/vlsi-questions-answers-metal-oxide-semiconductor-transistor-1-q6c.png"><img alt="Representation of p-MOSFET - option c" class="alignnone size-full wp-image-162154" height="66" src="https://www.sanfoundry.com/wp-content/uploads/2017/05/vlsi-questions-answers-metal-oxide-semiconductor-transistor-1-q6c.png" width="61"/></a> | |
| 5. |
The correct representation of n-MOSFET is: |
| A. | <a href="https://www.sanfoundry.com/wp-content/uploads/2017/05/vlsi-questions-answers-metal-oxide-semiconductor-transistor-1-q5a.png"><img alt="Representation of n-MOSFET - option a" class="alignnone size-full wp-image-162149" height="117" src="https://www.sanfoundry.com/wp-content/uploads/2017/05/vlsi-questions-answers-metal-oxide-semiconductor-transistor-1-q5a.png" width="109"/></a> |
| B. | <a href="https://www.sanfoundry.com/wp-content/uploads/2017/05/vlsi-questions-answers-metal-oxide-semiconductor-transistor-1-q5b.png"><img alt="Representation of n-MOSFET - option b" class="alignnone size-full wp-image-162150" height="117" src="https://www.sanfoundry.com/wp-content/uploads/2017/05/vlsi-questions-answers-metal-oxide-semiconductor-transistor-1-q5b.png" width="109"/></a> |
| C. | <a href="https://www.sanfoundry.com/wp-content/uploads/2017/05/vlsi-questions-answers-cmos-logic-gates-q5c1.png"><img alt="Representation of n-MOSFET - option c" class="alignnone size-full wp-image-162151" height="159" src="https://www.sanfoundry.com/wp-content/uploads/2017/05/vlsi-questions-answers-cmos-logic-gates-q5c1.png" width="145"/></a> |
| D. | None of the mentioned |
| Answer» D. None of the mentioned | |
| 6. |
The majority carriers of p-type semiconductor are: |
| A. | Holes |
| B. | Negative ions |
| C. | Electrons |
| D. | Positive ions |
| Answer» B. Negative ions | |
| 7. |
The n-type semiconductor have _______ as majority carriers. |
| A. | Holes |
| B. | Negative ions |
| C. | Electrons |
| D. | Positive ions |
| Answer» D. Positive ions | |
| 8. |
The conductivity of the pure silicon is raised by: |
| A. | Introducing Dopants (impurities) |
| B. | Increasing Pressure |
| C. | Decreasing Temperature |
| D. | Deformation of Lattice |
| Answer» B. Increasing Pressure | |