MCQOPTIONS
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MCQOPTIONS
This section includes 7 Mcqs, each offering curated multiple-choice questions to sharpen your Vlsi knowledge and support exam preparation. Choose a topic below to get started.
| 1. |
In MESFET for gate _____ junction is used. |
| A. | pnp junction |
| B. | npn junction |
| C. | schottky junction |
| D. | n junction |
| Answer» D. n junction | |
| 2. |
As the separation between metal-semiconductor surface is reduced, induction charge |
| A. | increases |
| B. | decreases |
| C. | remains constant |
| D. | is not affected |
| Answer» B. decreases | |
| 3. |
Schottky barrier is created due to the difference in |
| A. | voltages |
| B. | thickness |
| C. | work function |
| D. | density |
| Answer» D. density | |
| 4. |
The MESFET has maximum |
| A. | gate to drain voltage |
| B. | gate to source voltage |
| C. | source voltage |
| D. | drain voltage |
| Answer» C. source voltage | |
| 5. |
A highly doped thick channel exhibits _______ threshold voltage. |
| A. | smaller negative |
| B. | smaller positive |
| C. | larger negative |
| D. | larger positive |
| Answer» D. larger positive | |
| 6. |
D type and E type MESFETs operates by ________ of existing doped channel. |
| A. | depletion |
| B. | enhancement |
| C. | e type MESFET |
| D. | d type MESFET |
| Answer» B. enhancement | |
| 7. |
The gallium arsenide field effect transistor is ________ majority carrier device. |
| A. | bulk current insulation |
| B. | bulk current conduction |
| C. | bulk voltage insulation |
| D. | bulk voltage conduction |
| Answer» C. bulk voltage insulation | |