MCQOPTIONS
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MCQOPTIONS
This section includes 1232 Mcqs, each offering curated multiple-choice questions to sharpen your Electrical Engineering knowledge and support exam preparation. Choose a topic below to get started.
| 1101. |
a garin boundary is a transition region which represents _ |
| A. | imperfectio ns in arrengement of atoms |
| B. | foreign atom located in th region |
| C. | region with unique crystal structure |
| D. | none of the above |
| Answer» B. foreign atom located in th region | |
| 1102. |
in a given material adjacent grains will have |
| A. | same crystal structure |
| B. | different crystal |
| C. | same crystal structure |
| D. | a or b |
| Answer» E. | |
| 1103. |
a garin boundary represents |
| A. | one dimensional defect |
| B. | zero dimensional defect |
| C. | two dimenstiona l defect |
| D. | none of the above |
| Answer» D. none of the above | |
| 1104. |
the is defect that causes sepeartion of grain |
| A. | grain boundary |
| B. | twin boundary |
| C. | stacking faults |
| D. | none of the above |
| Answer» B. twin boundary | |
| 1105. |
the surface defects are introduced in the material during of material |
| A. | solidificatio n |
| B. | heat treatment |
| C. | plastic deformation |
| D. | all of the above |
| Answer» E. | |
| 1106. |
surafec defects are associated with |
| A. | defects within same crystal structure with different orientation of atomic planes |
| B. | defects within adjacent region consisting of different crystal structure |
| C. | defects within adjacent region consisting of same crystal structure |
| D. | any of the above |
| Answer» E. | |
| 1107. |
surface defects are |
| A. | one dimensional defect |
| B. | two dimensional defect |
| C. | theree dimensional defect |
| D. | none of the above |
| Answer» C. theree dimensional defect | |
| 1108. |
linear defects increase and Decrease |
| A. | hardness, electrical conductivity |
| B. | electrical conductivity , hardness |
| C. | hardness, electrical resistance |
| D. | electrical resistance, hardness |
| Answer» D. electrical resistance, hardness | |
| 1109. |
the magnitude of edge dislocation in a lattice structure can be measured by |
| A. | miller indices |
| B. | burgers vector |
| C. | microscope |
| D. | none of the above |
| Answer» C. microscope | |
| 1110. |
the magnitude of lattice distortion in edge dislocation si near the dislocation as compared to region away from dislocation |
| A. | constant |
| B. | lower |
| C. | higher |
| D. | varies randomly |
| Answer» D. varies randomly | |
| 1111. |
burgers vector |
| A. | is a measure of lattice distortion |
| B. | is a measure of lattice distortion and is measured as distance along the close packed directions |
| C. | stacking faults |
| D. | none of the above |
| Answer» C. stacking faults | |
| 1112. |
a measure of lattice distortion which is measured as a distance along the close packed directions |
| A. | burgers vector |
| B. | barbas vector |
| C. | any one of above |
| D. | none of the above |
| Answer» B. barbas vector | |
| 1113. |
the linear defects are introduced in the material during _ of material |
| A. | solidificatio n |
| B. | heat treatment |
| C. | plastic deformation |
| D. | all of the above |
| Answer» E. | |
| 1114. |
the defect associated with addition / missing / misalighnment of a series of atoms from its designated posiiton is called as |
| A. | point defect |
| B. | linear defect |
| C. | surface defect |
| D. | none of the above |
| Answer» C. surface defect | |
| 1115. |
point defect increase and decrease |
| A. | hardness, electrical conductivity |
| B. | electrical conductivity , hardness |
| C. | hardness, electrical resistance |
| D. | electrical resistance, hardness |
| Answer» B. electrical conductivity , hardness | |
| 1116. |
if an anion and cation are absent in pair the defect is known as |
| A. | schottky |
| B. | vacancy |
| C. | substitution al |
| D. | frenkel |
| Answer» B. vacancy | |
| 1117. |
Frenkel defect is associated with |
| A. | vacancy and self interstitial defect |
| B. | vacancy and substitution al defect |
| C. | substitution al and self intestitial defect |
| D. | none of the above |
| Answer» B. vacancy and substitution al defect | |
| 1118. |
substitutional impurity defect is associated with |
| A. | atom leaves its posiiton and locates in the interstitial sites |
| B. | foreign atom occupies the lattice posiiton of regular atomic structure |
| C. | foreign atom occupies the interstitial sites |
| D. | missing of an atom from its designated position |
| Answer» C. foreign atom occupies the interstitial sites | |
| 1119. |
when any atom occupies the interstitial position of material increases |
| A. | strength |
| B. | hardness |
| C. | both of the above |
| D. | none of the above |
| Answer» B. hardness | |
| 1120. |
any atom when leaves its position and occupies the interstitial sites is called as |
| A. | slf interstitial |
| B. | interstitial |
| C. | both of the above |
| D. | none of the above |
| Answer» B. interstitial | |
| 1121. |
vacancy defect is assocoated with |
| A. | atom leaves its position and locates in the interstitial sites |
| B. | missing of an atom from its designated position |
| C. | foreign atom occupies the interstitial sites |
| D. | both a and b |
| Answer» E. | |
| 1122. |
atoms are bonded with each other through               bond |
| A. | covalent |
| B. | ionic |
| C. | both a and b |
| D. | a or b |
| Answer» E. | |
| 1123. |
the bonding between atoms breaks due to the |
| A. | reduction in energy possesed by them |
| B. | increase in energy possesed by them |
| C. | chemical reaction |
| D. | none of the above |
| Answer» C. chemical reaction | |
| 1124. |
lattice vibration affects the                   properties of material |
| A. | electrical |
| B. | magnetic |
| C. | thermal |
| D. | all of the above |
| Answer» E. | |
| 1125. |
which of the following is a type of surface defect ? |
| A. | dislocation |
| B. | low angle grain boundary |
| C. | schottky |
| D. | both b and c |
| Answer» C. schottky | |
| 1126. |
which of the following defect is not surface defect ? |
| A. | dislocation |
| B. | low angle grain boundary |
| C. | schottky |
| D. | both b and c |
| Answer» E. | |
| 1127. |
which of the following is line defect ? |
| A. | dislocation |
| B. | low angle grain boundary |
| C. | schottky |
| D. | both b and c |
| Answer» B. low angle grain boundary | |
| 1128. |
whioch of the following is not line defect ? |
| A. | dislocation |
| B. | low angle grain boundary |
| C. | schottky |
| D. | both b and c |
| Answer» E. | |
| 1129. |
surface defects includes |
| A. | edge and screw dislocation |
| B. | edge dislocations and grain boundaries |
| C. | grain boundaries, twin boundaries, lattice vibrations |
| D. | grain boundaries, twin boundaries, low angle boundary |
| Answer» E. | |
| 1130. |
line defects include |
| A. | edge and screw dislocation |
| B. | edge dislocations and grain boundaries |
| C. | screw dislocations and stacking faults |
| D. | vacancy, substitution al, interstitial |
| Answer» B. edge dislocations and grain boundaries | |
| 1131. |
point defects include |
| A. | vacancy, substitution al, edge dislocations |
| B. | substitution al, edge dislocation, grain boundaries |
| C. | substitution al, edge dislocation ,stacking faults |
| D. | vacancy, substitution al, interstitial defects |
| Answer» E. | |
| 1132. |
vacancy, self interstitial, substitutional are all types of |
| A. | line defects |
| B. | surface defects |
| C. | voliume defects |
| D. | point defects |
| Answer» E. | |
| 1133. |
the effect of imperfections in crystal struture can be |
| A. | desirable |
| B. | adverse |
| C. | both a or b |
| D. | none of the above |
| Answer» D. none of the above | |
| 1134. |
the imperfection sin crystal structure influence the of materials |
| A. | electrical conductivity |
| B. | density |
| C. | strength |
| D. | all of the above |
| Answer» E. | |
| 1135. |
imperfections are introduced during |
| A. | plastic deformation |
| B. | metal forming |
| C. | heat treatment |
| D. | all of the above |
| Answer» E. | |
| 1136. |
the mechanical property of material depends on |
| A. | size |
| B. | weight |
| C. | crystal structure |
| D. | none of the above |
| Answer» D. none of the above | |
| 1137. |
due to change in mechanical properties of the material can be changed |
| A. | color |
| B. | shape |
| C. | imperfectio ns |
| D. | none of the above |
| Answer» D. none of the above | |
| 1138. |
a crystalline material has atoms in               ordered location which is |
| A. | random, non repetitive |
| B. | perfect, repetitive |
| C. | perfect, non repetitive |
| D. | none of the above |
| Answer» C. perfect, non repetitive | |
| 1139. |
which of the following is not true for BCC structure |
| A. | it has atomic packing factor of 0.58 |
| B. | it has no central atom |
| C. | iat has face atom shared by consecutive two faces |
| D. | none of the above |
| Answer» E. | |
| 1140. |
which of the following is true for BCC structure |
| A. | it has atomic packing factor of 0.52 |
| B. | it has no central atom |
| C. | iat has face atom shared by consecutive two faces |
| D. | none of the above |
| Answer» C. iat has face atom shared by consecutive two faces | |
| 1141. |
which of the following is not true for SC structure |
| A. | it has atomic packing factor of 0.58 |
| B. | it has no central atom |
| C. | iat has face atom shared by consecutive two faces |
| D. | none of the above |
| Answer» E. | |
| 1142. |
which of the following is true for SC structure |
| A. | it has atomic packing factor of |
| B. | it has no central atom |
| C. | iat has face atom shared by consecutive |
| D. | none of the above |
| Answer» B. it has no central atom | |
| 1143. |
which of the following is not true for FCC structure |
| A. | it has atomic packing factor of 0.52 |
| B. | it has no central atom |
| C. | iat has face atom shared by consecutive two faces |
| D. | none of the above |
| Answer» B. it has no central atom | |
| 1144. |
the correct order of packing factor for FCC, HCP, BCC is |
| A. | 0.52, 0.68, 0.74 |
| B. | 0.74, 0.74, 0.68 |
| C. | 0.74, 0.68, 0.52 |
| D. | 0.52, 0.68, 0.74 |
| Answer» C. 0.74, 0.68, 0.52 | |
| 1145. |
the correct order of packing factor for SC, BCC, FCC is |
| A. | 0.74, 0.52, 0.68 |
| B. | 0.68, 0.74, 0.74 |
| C. | 0.74, 0.68, 0.52 |
| D. | 0.52, 0.68, 0.74 |
| Answer» E. | |
| 1146. |
which of the following is true for FCC structure |
| A. | it has atomic packing factor of 0.74 |
| B. | it has no central atom |
| C. | iat has face atom shared by consecutive two faces |
| D. | all of the above |
| Answer» E. | |
| 1147. |
the correct order of packing factor for BCC, FCC, HCP is |
| A. | 0.52,0.68,0. 74 |
| B. | 0.68,0.74,0. 74 |
| C. | 0.74, 0.68, 0.52 |
| D. | 0.52,0.68,0. 74 |
| Answer» C. 0.74, 0.68, 0.52 | |
| 1148. |
Lead has crystal structure |
| A. | simple cubic |
| B. | body centred |
| C. | face centred |
| D. | hexagonal close packed |
| Answer» D. hexagonal close packed | |
| 1149. |
Cadmium has crystal structure |
| A. | simple cubic |
| B. | body centred |
| C. | face centred |
| D. | hexagonal close packed |
| Answer» E. | |
| 1150. |
Cobalt has crystal structure |
| A. | simple cubic |
| B. | body centred |
| C. | face centred |
| D. | hexagonal close packed |
| Answer» E. | |