Explore topic-wise MCQs in Vlsi.

This section includes 10 Mcqs, each offering curated multiple-choice questions to sharpen your Vlsi knowledge and support exam preparation. Choose a topic below to get started.

1.

THE_TRANSIT_TIME_CAN_BE_GIVEN_AS?$

A. 2d
B. 2d/µE
C. µE/d
D. µE/2d
Answer» C. ¬¨¬®¬¨¬µE/d
Discussion
2.

Drift velocity can be given a?

A. E/µ
B. µ/E
C. µ * E
D. E
Answer» D. E
Discussion
3.

L depends on

A. substrate concentration
B. Vgs
C. Vt
D. Vds
Answer» B. Vgs
Discussion
4.

What is the minimum value of L to maintain transistor action?

A. d
B. d/2
C. 2d
D. d<sup>2</sup>
Answer» D. d<sup>2</sup>
Discussion
5.

The size of a transistor is usually defined in terms of its

A. channel length
B. feature size
C. width
D. thickness ‘d’
Answer» B. feature size
Discussion
6.

Maximum electric field can be given as

A. V/d
B. d/V
C. 2V/d
D. d/2V
Answer» D. d/2V
Discussion
7.

If doping level of substrate Nb increases then depletion width

A. increases
B. decreases
C. does not change
D. increases and then decreases
Answer» C. does not change
Discussion
8.

Vdd is scaled by

A. α
B. β
C. 1/α
D. 1/β
Answer» E.
Discussion
9.

As the channel length is reduced in a MOS transistor, depletion region width must be

A. increased
B. decreased
C. must not vary
D. exponentially decreased
Answer» C. must not vary
Discussion
10.

Built-in junction potential Vb depends on

A. Vdd
B. Vgs
C. substrate doping level
D. oxide thickness
Answer» D. oxide thickness
Discussion