Explore topic-wise MCQs in Power Electronics.

This section includes 9 Mcqs, each offering curated multiple-choice questions to sharpen your Power Electronics knowledge and support exam preparation. Choose a topic below to get started.

1.

THE_STRUCTURE_OF_THE_IGBT_IS_A?$

A. P-N-P structure connected by a MOS gate
B. N-N-P-P structure connected by a MOS gate
C. P-N-P-N structure connected by a MOS gate
D. N-P-N-P structure connected by a MOS gate
Answer» D. N-P-N-P structure connected by a MOS gate
Discussion
2.

The_major_drawback_of_the_first_generation_IGBTs_was_that,_they_had$

A. latch-up problems
B. noise & secondary breakdown problems
C. sluggish operation
D. latch-up & secondary breakdown problems
Answer» E.
Discussion
3.

The voltage blocking capability of the IGBT is determined by the

A. injection layer
B. body layer
C. metal used for the contacts
D. drift layer
Answer» E.
Discussion
4.

In IGBT, the n– layer above the p+ layer is called as the$

A. drift layer
B. injection layer
C. body layer
D. collector Layer
Answer» B. injection layer
Discussion
5.

The controlling parameter in IGBT is the

A. I<sub>G</sub>
B. V<sub>GE</sub>
C. I<sub>C</sub>
D. V<sub>CE</sub>
Answer» C. I<sub>C</sub>
Discussion
6.

In IGBT, the p+ layer connected to the collector terminal is called as the

A. drift layer
B. injection layer
C. body layer
D. collector Layer
Answer» C. body layer
Discussion
7.

The three terminals of the IGBT are

A. base, emitter & collector
B. gate, source & drain
C. gate, emitter & collector
D. base, source & drain
Answer» D. base, source & drain
Discussion
8.

IGBT & BJT both posses ___

A. low on-state power losses
B. high on-state power losses
C. low switching losses
D. high input impedance
Answer» B. high on-state power losses
Discussion
9.

IGBT possess

A. low input impedance
B. high input impedance
C. high on-state resistance
D. second breakdown problems
Answer» C. high on-state resistance
Discussion