MCQOPTIONS
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MCQOPTIONS
This section includes 7 Mcqs, each offering curated multiple-choice questions to sharpen your Vlsi knowledge and support exam preparation. Choose a topic below to get started.
| 1. |
In high electron mobility transistor, the electrons are |
| A. | far apart |
| B. | high mobility |
| C. | near by and low mobility |
| D. | far apart and high mobility |
| Answer» C. near by and low mobility | |
| 2. |
Equal number of p and n devices in a device will consume |
| A. | small area |
| B. | large area |
| C. | all of the mentioned |
| D. | none of the mentioned |
| Answer» C. all of the mentioned | |
| 3. |
In a CE-JFET, the ratio of electron mobility to hole mobility is equal to |
| A. | 4 |
| B. | 10 |
| C. | 5 |
| D. | 20 |
| Answer» C. 5 | |
| 4. |
E-JFET technology has |
| A. | low voltage swing |
| B. | high current swing |
| C. | high power requirements |
| D. | high voltage swing |
| Answer» E. | |
| 5. |
To activate a dopant, _______ is necessary. |
| A. | low temperature stable gate |
| B. | low temperature stable drain |
| C. | high temperature stable gate |
| D. | high temperature stable drain |
| Answer» D. high temperature stable drain | |
| 6. |
For the formation of E-MESFET _______ is used. |
| A. | n- implantation |
| B. | n+ implantation |
| C. | p- implantation |
| D. | p+ implantation |
| Answer» B. n+ implantation | |
| 7. |
Which has a lightly doped channel? |
| A. | E-MOSFET |
| B. | D-MOSFET |
| C. | E-JFET |
| D. | CE-JFET |
| Answer» B. D-MOSFET | |