MCQOPTIONS
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MCQOPTIONS
This section includes 13 Mcqs, each offering curated multiple-choice questions to sharpen your Vlsi knowledge and support exam preparation. Choose a topic below to get started.
| 1. |
Which was employed as the first level capping material? |
| A. | SiO2 |
| B. | SiO |
| C. | Si3N4 |
| D. | Si2N4 |
| Answer» B. SiO | |
| 2. |
Which has the greatest mismatch? |
| A. | Si |
| B. | Ga |
| C. | GaAs |
| D. | SiO2 |
| Answer» E. | |
| 3. |
Stress at the interface cannot arise from |
| A. | lattice mismatch |
| B. | intrinsic stress |
| C. | thermal mismatch |
| D. | pressure mismatch |
| Answer» E. | |
| 4. |
The channel resistance is high for |
| A. | source contact |
| B. | drain contact |
| C. | gate contact |
| D. | source and drain contacts |
| Answer» E. | |
| 5. |
Implantation of ________ is done for the formation of source and drain. |
| A. | n- layer |
| B. | n+ layer |
| C. | p- layer |
| D. | p+ layer |
| Answer» C. p- layer | |
| 6. |
Formation of n-active layer is achieved by |
| A. | indirent ion implantation |
| B. | direct ion implantation |
| C. | liquifying |
| D. | wafering |
| Answer» C. liquifying | |
| 7. |
In GaAs technology, deposited dielectric films brings about |
| A. | passivation |
| B. | combination |
| C. | decomposition |
| D. | diffusion |
| Answer» B. combination | |
| 8. |
Stable native oxide was produced by |
| A. | oxidation of silicon |
| B. | oxidation of gallium |
| C. | oxidation of boron |
| D. | oxidation of aluminium |
| Answer» B. oxidation of gallium | |
| 9. |
Threshold voltage can be varied by |
| A. | varying impurity concentration |
| B. | varying doping level |
| C. | varying channel length |
| D. | varying source voltage |
| Answer» C. varying channel length | |
| 10. |
Which devices are fabricated using planar process? |
| A. | enhancement mode MESFET |
| B. | depletion mode MESFET |
| C. | enhancement mode MOSFET |
| D. | depletion mode MOSFET |
| Answer» C. enhancement mode MOSFET | |
| 11. |
The sequence of the steps followed in fabrication of GaAs is |
| A. | ii, iii, i, iv |
| B. | i, ii, iii, iv |
| C. | iii, i, ii, iv |
| D. | iv, i, ii, iiiView Answer |
| Answer» D. iv, i, ii, iiiView Answer | |
| 12. |
Wafers in GaAs fabrication are thermally unstable. |
| A. | true |
| B. | false |
| Answer» C. | |
| 13. |
Gallium arsenide crystals are grown from |
| A. | boron oxide |
| B. | silicon oxide |
| C. | silicon nitride |
| D. | boron nitride |
| Answer» E. | |