MCQOPTIONS
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MCQOPTIONS
This section includes 303 Mcqs, each offering curated multiple-choice questions to sharpen your Electronics knowledge and support exam preparation. Choose a topic below to get started.
| 151. |
Operating point represents ___________ |
| A. | Values of IC and VCE when signal is applied |
| B. | The magnitude of signal |
| C. | Zero signal values of IC and VCE |
| D. | None of the above |
| Answer» D. None of the above | |
| 152. |
The circuit that provides the best stabilization of operating point is ___________ |
| A. | Base resistor bias |
| B. | Collector feedback bias |
| C. | Potential divider bias |
| D. | None of the above |
| Answer» D. None of the above | |
| 153. |
The Q of a tuned circuit refers to the property of ___________ |
| A. | Sensitivity |
| B. | Fidelity |
| C. | Selectivity |
| D. | None of the above |
| Answer» D. None of the above | |
| 154. |
At parallel resonance, the ratio L/C is ___________ |
| A. | Very large |
| B. | Zero |
| C. | Small |
| D. | None of the above |
| Answer» B. Zero | |
| 155. |
The current IB is ___________ |
| A. | electron current |
| B. | hole current |
| C. | donor ion current |
| D. | acceptor ion current |
| Answer» B. hole current | |
| 156. |
At the base emitter junctions of a transistor, one finds ___________ |
| A. | a reverse bias |
| B. | a wide depletion layer |
| C. | low resistance |
| D. | none of the above |
| Answer» D. none of the above | |
| 157. |
In a parallel LC circuit, if the input signal frequency is increased above resonant frequency then ___________ |
| A. | XL increases and XC decreases |
| B. | XL decreases and XC increases |
| C. | Both XL and XC increase |
| D. | Both XL and XC decrease |
| Answer» B. XL decreases and XC increases | |
| 158. |
The operating point ___________ on the a.c. load line |
| A. | Also line |
| B. | Does not lie |
| C. | May or may not lie |
| D. | Data insufficient |
| Answer» B. Does not lie | |
| 159. |
In the design of a biasing circuit, the value of collector load RC is determined by ___________ |
| A. | VCE consideration |
| B. | VBE consideration |
| C. | IB consideration |
| D. | None of the above |
| Answer» B. VBE consideration | |
| 160. |
The operating point is also called the ___________ |
| A. | Cut off point |
| B. | Quiescent point |
| C. | Saturation point |
| D. | None of the above |
| Answer» C. Saturation point | |
| 161. |
For good stabilsation in voltage divider bias, the current I1 flowing through R1 and R2 should be equal to or greater than |
| A. | 10 IB |
| B. | 3 IB |
| C. | 2 IB |
| D. | 4 IB |
| Answer» B. 3 IB | |
| 162. |
In a base resistor method, if the value of ß changes by 50, then collector current will change by a factor |
| A. | 25 |
| B. | 50 |
| C. | 100 |
| D. | 200 |
| Answer» C. 100 | |
| 163. |
For germanium transistor amplifier, VCE should ___________ for faithful amplification |
| A. | Be zero |
| B. | Be 0.2 V |
| C. | Not fall below 0.7 V |
| D. | None of the above |
| Answer» D. None of the above | |
| 164. |
A heat sink is generally used with a transistor to ___________ |
| A. | increase the forward current |
| B. | decrease the forward current |
| C. | compensate for excessive doping |
| D. | prevent excessive temperature rise |
| Answer» E. | |
| 165. |
The most commonly used semiconductor in the manufacture of a transistor is ___________ |
| A. | germanium |
| B. | silicon |
| C. | carbon |
| D. | none of the above |
| Answer» C. carbon | |
| 166. |
The output impedance of a transistor is ___________ |
| A. | high |
| B. | zero |
| C. | low |
| D. | very low |
| Answer» B. zero | |
| 167. |
The value of a of a transistor is ___________ |
| A. | more than 1 |
| B. | less than 1 |
| C. | 1 |
| D. | none of the above |
| Answer» C. 1 | |
| 168. |
The Q of a tuned amplifier is generally ___________ |
| A. | Less than 5 |
| B. | Less than 10 |
| C. | More than 10 |
| D. | None of the above |
| Answer» D. None of the above | |
| 169. |
In a transistor if ß = 100 and collector current is 10 mA, then IE is ___________ |
| A. | 100 mA |
| B. | 100.1 mA |
| C. | 110 mA |
| D. | none of the above |
| Answer» C. 110 mA | |
| 170. |
The voltage gain in a transistor connected in ___________ arrangement is the highest |
| A. | common base |
| B. | common collector |
| C. | common emitter |
| D. | none of the above |
| Answer» D. none of the above | |
| 171. |
The power gain in a transistor connected in ___________ arrangement is the highest |
| A. | common emitter |
| B. | common base |
| C. | common collector |
| D. | none of the above |
| Answer» B. common base | |
| 172. |
The output impedance of a transistor connected in ___________ arrangement is the highest |
| A. | common emitter |
| B. | common collector |
| C. | common base |
| D. | none of the above |
| Answer» D. none of the above | |
| 173. |
The input impedance of a transistor is ___________ |
| A. | high |
| B. | low |
| C. | very high |
| D. | almost zero |
| Answer» C. very high | |
| 174. |
The element that has the biggest size in a transistor is ___________ |
| A. | collector |
| B. | base |
| C. | emitter |
| D. | collector-base-junction |
| Answer» B. base | |
| 175. |
The number of depletion layers in a transistor is ___________ |
| A. | four |
| B. | three |
| C. | one |
| D. | two |
| Answer» E. | |
| 176. |
In voltage divider bias, operating point is 3 V, 2 mA. If VCC = 9 V, RC = 2.2 kΩ, what is the value of RE ? |
| A. | 2000 Ω |
| B. | 1400 Ω |
| C. | 800 Ω |
| D. | 1600 Ω |
| Answer» D. 1600 Ω | |
| 177. |
The base resistor method is generally used in |
| A. | Amplifier circuits |
| B. | Switching circuits |
| C. | Rectifier circuits |
| D. | None of the above |
| Answer» C. Rectifier circuits | |
| 178. |
The emitter of a transistor is ___________ doped |
| A. | lightly |
| B. | heavily |
| C. | moderately |
| D. | none of the above |
| Answer» C. moderately | |
| 179. |
The collector of a transistor is ___________ doped |
| A. | heavily |
| B. | moderately |
| C. | lightly |
| D. | none of the above |
| Answer» C. lightly | |
| 180. |
The base of a transistor is ___________ doped |
| A. | heavily |
| B. | moderately |
| C. | lightly |
| D. | none of the above |
| Answer» D. none of the above | |
| 181. |
In a pnp transistor, the current carriers are ___________ |
| A. | acceptor ions |
| B. | donor ions |
| C. | free electrons |
| D. | holes |
| Answer» E. | |
| 182. |
ICEO = () ICBO |
| A. | ß |
| B. | 1 + a |
| C. | 1 + ß |
| D. | none of the above |
| Answer» D. none of the above | |
| 183. |
In a npn transistor, ___________ are the minority carriers |
| A. | free electrons |
| B. | holes |
| C. | donor ions |
| D. | acceptor ions |
| Answer» C. donor ions | |
| 184. |
A silicon transistor is biased with base resistor method. If ß=100, VBE =0.7 V, zero signal collector current IC = 1 mA and VCC = 6V , what is the value of the base resistor RB? |
| A. | 105 kΩ |
| B. | 530 kΩ |
| C. | 315 kΩ |
| D. | None of the above |
| Answer» C. 315 kΩ | |
| 185. |
The biasing circuit has a stability factor of 50. If due to temperature change, ICBO changes by 1 µA, then IC will change by ___________ |
| A. | 100 µA |
| B. | 25 µA |
| C. | 20 µA |
| D. | 50 µA |
| Answer» E. | |
| 186. |
Tuned class C amplifiers are used for RF signals of ___________ |
| A. | Low power |
| B. | High power |
| C. | Very high power |
| D. | None of the above |
| Answer» E. | |
| 187. |
The Q of an LC circuit is given by ___________ |
| A. | 2pfr x R |
| B. | R / 2pfrL |
| C. | 2pfrL / R |
| D. | R2/2pfrL |
| Answer» D. R2/2pfrL | |
| 188. |
The leakage current in a silicon transistor is about ___________ the leakage current in a germanium transistor |
| A. | One hundredth |
| B. | One tenth |
| C. | One thousandth |
| D. | One millionth |
| Answer» D. One millionth | |
| 189. |
For proper amplification by a transistor circuit, the operating point should be located at the ___________ of the d.c. load line |
| A. | The end point |
| B. | Middle |
| C. | The maximum current point |
| D. | None of the above |
| Answer» C. The maximum current point | |
| 190. |
The purpose of resistance in the emitter circuit of a transistor amplifier is to ___________ |
| A. | Limit the maximum emitter current |
| B. | Provide base-emitter bias |
| C. | Limit the change in emitter current |
| D. | None of the above |
| Answer» D. None of the above | |
| 191. |
If the maximum collector current due to signal alone is 3 mA, then zero signal collector current should be at least equal to ___________ |
| A. | 6 mA |
| B. | 2 mA |
| C. | 3 mA |
| D. | 1 mA |
| Answer» D. 1 mA | |
| 192. |
The value of ß for a transistor is generally ___________ |
| A. | 1 |
| B. | less than 1 |
| C. | between 20 and 500 |
| D. | above 500 |
| Answer» D. above 500 | |
| 193. |
In a certain CS JFET amplifier, RD= 1kΩ , RS= 560Ω , VDD=10V and gm= 4500 µS. If the source resistor is completely bypassed, the voltage gain is ___________ |
| A. | 450 |
| B. | 45 |
| C. | 2.52 |
| D. | 4.5 |
| Answer» E. | |
| 194. |
In a certain common source D-MOSFET amplifier, Vds =3.2 V r.m. and Vgs = 280 mV r.m.s. The voltage gain is ___________ |
| A. | 1 |
| B. | 11.4 |
| C. | 8.75 |
| D. | 3.2 |
| Answer» C. 8.75 | |
| 195. |
If the cross-sectional area of the channel in n-channel JEFT increases, the drain current ___________ |
| A. | is increased |
| B. | is decreased |
| C. | remains the same |
| D. | none of the above |
| Answer» B. is decreased | |
| 196. |
If the gate of a JFET is made less negative, the width of the conducting channel ___________ |
| A. | remains the same |
| B. | is decreased |
| C. | is increased |
| D. | none of the above |
| Answer» D. none of the above | |
| 197. |
If the reverse bias on the gate of a JFET is increased, then width of the conducting channel ___________ |
| A. | is decreased |
| B. | is increased |
| C. | remains the same |
| D. | none of the above |
| Answer» B. is increased | |
| 198. |
If the value of collector current IC increases, then the value of VCE ___________ |
| A. | Remains the same |
| B. | Decreases |
| C. | Increases |
| D. | None of the above |
| Answer» C. Increases | |
| 199. |
The value of VBE ___________ |
| A. | Depends upon IC to moderate extent |
| B. | Is almost independent of IC |
| C. | Is strongly dependant on IC |
| D. | None of the above |
| Answer» C. Is strongly dependant on IC | |
| 200. |
Transistor biasing is generally provided by a ___________ |
| A. | Biasing circuit |
| B. | Bias battery |
| C. | Diode |
| D. | None of the above |
| Answer» B. Bias battery | |