MCQOPTIONS
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MCQOPTIONS
This section includes 9294 Mcqs, each offering curated multiple-choice questions to sharpen your Engineering knowledge and support exam preparation. Choose a topic below to get started.
| 4051. |
Which of the following is error correcting code? |
| A. | EBCDIC |
| B. | Gray |
| C. | Hamming |
| D. | ASCII |
| Answer» D. ASCII | |
| 4052. |
A universal shift register can shift |
| A. | from left to right |
| B. | from right to left |
| C. | both from left to right and right to left |
| D. | none of the above |
| Answer» D. none of the above | |
| 4053. |
Available multiplexer IC package can have a maximum of 8 inputs. |
| A. | True |
| B. | False |
| Answer» C. | |
| 4054. |
A VF display operates on the principle of a vacuum diode. |
| A. | True |
| B. | False |
| Answer» C. | |
| 4055. |
In a 3 input NAND gate, the number of states in which output is 0 equals |
| A. | 8 |
| B. | 1 |
| C. | 6 |
| D. | 5 |
| Answer» C. 6 | |
| 4056. |
In a mod-12 counter the input clock frequency is 10 kHz. The output frequency is |
| A. | 0.833 kHz |
| B. | 1.0 kHz |
| C. | 0.91 kHz |
| D. | 0.77 kHz |
| Answer» B. 1.0 kHz | |
| 4057. |
What is the necessary a.c. input power from the transformer secondary used in a half wave rectifier to deliver 500 W of d.c. power to the load? |
| A. | 1232 W |
| B. | 848 W |
| C. | 616 W |
| D. | 308 W |
| Answer» B. 848 W | |
| 4058. |
In a semi-conductor diode, the barrier offers opposition to |
| A. | holes in P-region only |
| B. | free electrons in N-region only |
| C. | majority carriers in both regions |
| D. | majority as well as minority carriers in both regions |
| Answer» D. majority as well as minority carriers in both regions | |
| 4059. |
In a half wave rectifier, the load current flows |
| A. | only for the positive half cycle of the input signal |
| B. | only for the negative half cycle of the input signal |
| C. | for full cycle |
| D. | for less than fourth cycle |
| Answer» B. only for the negative half cycle of the input signal | |
| 4060. |
In the sale of diamonds the unit of weight is carat. One carat is equal to |
| A. | 100 mg |
| B. | 150 mg |
| C. | 200 mg |
| D. | 500 mg |
| Answer» D. 500 mg | |
| 4061. |
R.M.S. value of the waveform shown will be |
| A. | 3.53 V |
| B. | 1 V |
| C. | 7.07 V |
| D. | 8.56 V |
| Answer» D. 8.56 V | |
| 4062. |
The effect of current shunt feedback in an amplifier is to |
| A. | increase the I/P resistance and decrease the O/P resistance |
| B. | increase both I/P and O/P resistance |
| C. | decrease both I/P and O/P resistance |
| D. | decrease the I/P resistance and increase O/P resistance |
| Answer» E. | |
| 4063. |
Assertion (A): A JFET can be used as a current source. Reason (R): In beyond pinch off region the current in JFET is nearly constant. |
| A. | Both A and R are true and R is correct explanation of A |
| B. | Both A and R are true but R is not a correct explanation of A |
| C. | A is true but R is false |
| D. | A is false but R is true |
| Answer» B. Both A and R are true but R is not a correct explanation of A | |
| 4064. |
Permalloy is |
| A. | a variety of stainless steel |
| B. | a polymer |
| C. | a conon-ferrous alloy used in aircraft industry |
| D. | a nickel an iron alloy having high permeability |
| Answer» E. | |
| 4065. |
Which of the following could be the maximum current rating of junction diode by 126? |
| A. | 1 A |
| B. | 10 A |
| C. | 20 A |
| D. | 100 A |
| Answer» B. 10 A | |
| 4066. |
The first dominant pole encountered in the frequency response of a compensated op-amp is approximately at |
| A. | 5 Hz |
| B. | 10 kHz |
| C. | 1 MHz |
| D. | 100 MHz |
| Answer» B. 10 kHz | |
| 4067. |
An electron in the conduction band |
| A. | has higher energy than the electron in the valence band |
| B. | has lower energy than the electron in the valence band |
| C. | loses its charge easily |
| D. | jumps to the top of the crystal |
| Answer» B. has lower energy than the electron in the valence band | |
| 4068. |
The magnetization 'm' of a superconductor in a field of H is |
| A. | extremely small |
| B. | - H |
| C. | - 1 |
| D. | Zero |
| Answer» C. - 1 | |
| 4069. |
The number of free electrons in acceptor atom is |
| A. | 1 |
| B. | 2 |
| C. | 3 |
| D. | 4 |
| Answer» D. 4 | |
| 4070. |
Resistivity of copper is nearly |
| A. | 1.56 ohm-cm |
| B. | 3.95 ohm-cm |
| C. | 14.55 ohm-cm |
| D. | 22.05 ohm-cm |
| Answer» B. 3.95 ohm-cm | |
| 4071. |
An ideal Op-amp is an ideal |
| A. | voltage controlled current source |
| B. | voltage controlled voltage source |
| C. | current controlled current source |
| D. | current controlled voltage source |
| Answer» C. current controlled current source | |
| 4072. |
Free electrons exist in |
| A. | first band |
| B. | second band |
| C. | third band |
| D. | conduction band |
| Answer» E. | |
| 4073. |
Indium, aluminium, arsenic are all p type impurities. |
| A. | True |
| B. | False |
| Answer» C. | |
| 4074. |
When a BJT is operated under saturated condition |
| A. | both junctions are forward biased |
| B. | both junctions are reverse biased |
| C. | CB junction is forward biased and EB junction is reverse biased |
| D. | EB junction is forward biased and CB junction is reverse biased |
| Answer» B. both junctions are reverse biased | |
| 4075. |
As the temperature of an intrinsic semiconductor material is increased |
| A. | additional holes are created in the conduction band |
| B. | protons get excited |
| C. | protons acquire charge |
| D. | energy of the atom is increased |
| Answer» E. | |
| 4076. |
Which of the following is not a semiconductor? |
| A. | Silicon |
| B. | Calcium arsenide |
| C. | Germanium |
| D. | Zinc sulphide |
| Answer» C. Germanium | |
| 4077. |
At absolute temperature |
| A. | the forbidden energy gap in germanium is higher than that in silicon |
| B. | the forbidden energy gap in germanium and silicon are equal |
| C. | the forbidden energy gap in silicon is higher than that in germanium |
| D. | none of the above |
| Answer» D. none of the above | |
| 4078. |
When a high voltage reference is required it is advantageous to use two or more zener diodes in series to allow |
| A. | higher voltage |
| B. | higher dissipation |
| C. | lower temperature coefficient |
| D. | all of the above |
| Answer» E. | |
| 4079. |
Assertion (A): When p-n junction is forward biased, steady current flows. Reason (R): When a p-n junction is forward biased, free electrons cross the junction from n to p and holes from p to n. |
| A. | Both A and R are true and R is correct explanation of A |
| B. | Both A and R are true but R is not a correct explanation of A |
| C. | A is true but R is false |
| D. | A is false but R is true |
| Answer» B. Both A and R are true but R is not a correct explanation of A | |
| 4080. |
Voltage series feedback (Also called series-shunt feedback) results in |
| A. | increase in both I/P and O/P impedances |
| B. | decrease in both I/P and O/P impedances |
| C. | increase in I/P impedance and decrease in O/P impedance |
| D. | decrease in I/P impedance and increase in O/P impedance |
| Answer» D. decrease in I/P impedance and increase in O/P impedance | |
| 4081. |
How many free electrons does a p type semiconductor has? |
| A. | only those produced by thermal energy |
| B. | only those produced by doping |
| C. | those produced by doping as well as thermal energy |
| D. | any of the above |
| Answer» B. only those produced by doping | |
| 4082. |
Which of the following has highest resistivity? |
| A. | Mica |
| B. | Paraffin wax |
| C. | Air |
| D. | Mineral oil |
| Answer» D. Mineral oil | |
| 4083. |
Assertion (A): In p-n-p transistor collector current is termed negative. Reason (R): In p-n-p transistor holes are majority carriers. |
| A. | Both A and R are true and R is correct explanation of A |
| B. | Both A and R are true but R is not a correct explanation of A |
| C. | A is true but R is false |
| D. | A is false but R is true |
| Answer» C. A is true but R is false | |
| 4084. |
The sensitivity of human eyes is maximum at |
| A. | white portion of spectrum |
| B. | green portion of spectrum |
| C. | red portion of spectrum |
| D. | violet portion of spectrum |
| Answer» C. red portion of spectrum | |
| 4085. |
Assertion (A): At room temperature the fermi level in p type semiconductor lies nearer to the valence band and in n type semiconductor it lies nearer to the conduction band. Reason (R): At room temperature, the p type semiconductor is rich in holes and n type semiconductor is rich in electrons. |
| A. | Both A and R are true and R is correct explanation of A |
| B. | Both A and R are true but R is not a correct explanation of A |
| C. | A is true but R is false |
| D. | A is false but R is true |
| Answer» B. Both A and R are true but R is not a correct explanation of A | |
| 4086. |
The drift velocity of electrons and holes is proportional to electric field strength. |
| A. | True |
| B. | False |
| Answer» B. False | |
| 4087. |
In an n channel MOSFET, the substrate is connected |
| A. | to negative terminal of battery |
| B. | to positive terminal of battery |
| C. | to either positive or negative terminal of battery |
| D. | none of the above |
| Answer» B. to positive terminal of battery | |
| 4088. |
Piezoelectric materials serves as a source of |
| A. | microwaves |
| B. | ultrasonic waves |
| C. | musical waves |
| D. | resonant waves |
| Answer» C. musical waves | |
| 4089. |
Greatest mobility can be expected in case of |
| A. | holes |
| B. | protons |
| C. | electrons |
| D. | negative ions |
| Answer» D. negative ions | |
| 4090. |
An enhancement mode MOSFET is off when the gate voltage is |
| A. | zero |
| B. | negative |
| C. | less than threshold value |
| D. | none of the above |
| Answer» D. none of the above | |
| 4091. |
When atoms are held together by the sharing of valence electrons |
| A. | each atom becomes free to move |
| B. | neutrons start shifting |
| C. | they form a covalent bond |
| D. | some of the electrons are lost |
| Answer» D. some of the electrons are lost | |
| 4092. |
Thermal runaway is not possible in FET, because as the temperature of FET increases. |
| A. | the mobility decreases |
| B. | the transconductance increases |
| C. | impedance of the source |
| D. | power dissipation in the chip |
| Answer» C. impedance of the source | |
| 4093. |
Assertion (A): When forward biased a p-n junction has low resistance. Reason (R): The ratio is called dynamic resistance. |
| A. | Both A and R are true and R is correct explanation of A |
| B. | Both A and R are true but R is not a correct explanation of A |
| C. | A is true but R is false |
| D. | A is false but R is true |
| Answer» C. A is true but R is false | |
| 4094. |
The relation between thermionic emission current and temperature is known as |
| A. | Richardson Dushman equation |
| B. | Langmuir child law |
| C. | Ohm's law |
| D. | Boltzmann's law |
| Answer» B. Langmuir child law | |
| 4095. |
For a P-N junction diode, the current in reverse bias may be |
| A. | few amperes |
| B. | between 0.5 A and 1 A |
| C. | few milliamperes |
| D. | few micro or nanoamperes |
| Answer» E. | |
| 4096. |
Assertion (A): JFET is a voltage controlled device. Reason (R): The drain current can be controlled by controlling VGS. |
| A. | Both A and R are true and R is correct explanation of A |
| B. | Both A and R are true but R is not a correct explanation of A |
| C. | A is true but R is false |
| D. | A is false but R is true |
| Answer» B. Both A and R are true but R is not a correct explanation of A | |
| 4097. |
The cut in voltage |
| A. | is the same for silicon and germanium diodes |
| B. | is a forward voltage |
| C. | is a reverse voltage |
| D. | is a forward voltage below which the current is very small |
| Answer» E. | |
| 4098. |
Assertion (A): Intrinsic semiconductor is an insulator at 0 K. Reason (R): Fermi level in intrinsic semiconductor is in the centre of forbidden energy band. |
| A. | Both A and R are true and R is correct explanation of A |
| B. | Both A and R are true but R is not a correct explanation of A |
| C. | A is true but R is false |
| D. | A is false but R is true |
| Answer» B. Both A and R are true but R is not a correct explanation of A | |
| 4099. |
CE saturation resistance of n-p-n transistor is |
| A. | <img src="/_files/images/electronics-and-communication-engineering/electronic-devices-and-circuits/43-169-1.png"> |
| B. | <img src="/_files/images/electronics-and-communication-engineering/electronic-devices-and-circuits/43-169-2.png"> |
| C. | <img src="/_files/images/electronics-and-communication-engineering/electronic-devices-and-circuits/43-169-3.png"> |
| D. | <img src="/_files/images/electronics-and-communication-engineering/electronic-devices-and-circuits/43-169-4.png"> |
| Answer» C. <img src="/_files/images/electronics-and-communication-engineering/electronic-devices-and-circuits/43-169-3.png"> | |
| 4100. |
The rate of change of excess carrier density is proportional to carrier density. |
| A. | True |
| B. | False |
| Answer» B. False | |