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MCQOPTIONS
This section includes 9294 Mcqs, each offering curated multiple-choice questions to sharpen your Engineering knowledge and support exam preparation. Choose a topic below to get started.
| 1901. |
In an oscillator the total phase shift around the loop must be |
| A. | 180 |
| B. | 90 |
| C. | 270 |
| D. | 0 |
| Answer» E. | |
| 1902. |
The mobility of e- for Ge and Si respectively is |
| A. | 1.66, 2.5 |
| B. | 2.5, 1.66 |
| C. | 2.7, 2.33 |
| D. | 2.33, 2.7 |
| Answer» B. 2.5, 1.66 | |
| 1903. |
If a capacitor C is charged by a constant current I, then the rate of change of voltage with time given by sweep speed equal to |
| A. | C/I |
| B. | IC |
| C. | I/C |
| D. | <img src="/_files/images/electronics-and-communication-engineering/analog-electronics/338-599-1.png"> |
| Answer» D. <img src="/_files/images/electronics-and-communication-engineering/analog-electronics/338-599-1.png"> | |
| 1904. |
In operational Amplifier, Common mode voltage gain should be |
| A. | 0 |
| B. | |
| C. | 1 |
| D. | 0.5 |
| Answer» B. | |
| 1905. |
In a self bias circuit for CE amplifier, the base voltage is |
| A. | equal to supply voltage |
| B. | more than supply voltage |
| C. | equal to or more than supply voltage |
| D. | less than supply voltage |
| Answer» E. | |
| 1906. |
Figure shows the feedback network of one of the very popular types of sinusoidal oscillators. Which one is that? |
| A. | Weinbridge oscillator |
| B. | Hartley oscillator |
| C. | Colpitt's oscillator |
| D. | R-C phase shift oscillator |
| Answer» B. Hartley oscillator | |
| 1907. |
One of the following can be used to generate a pulse whenever triggered |
| A. | flip-flop |
| B. | monostable multivibrator |
| C. | stable multivibrator |
| D. | Schmitt trigger |
| Answer» C. stable multivibrator | |
| 1908. |
A push pull amplifier is a |
| A. | power amplifier |
| B. | voltage amplifier |
| C. | current amplifier |
| D. | both power and current amplifier |
| Answer» B. voltage amplifier | |
| 1909. |
Consider the following rectifier circuits : half-wave rectifier without filterfull-wave rectifier without filterfull-wave rectifier with series inductance filterfull-wave rectifier with capacitance filter. The sequence of these rectifier circuits in decreasing order of their ripple factor is |
| A. | 1, 2, 3, 4 |
| B. | 3, 4, 1, 2 |
| C. | 1, 4, 3, 2 |
| D. | 3, 2, 1, 4 |
| Answer» B. 3, 4, 1, 2 | |
| 1910. |
An engineer designs an amplifier to have a voltage gain of 60, but when constructed it only had a gain of 50. How much feedback should be used to provide the desired level? |
| A. | +0.03% |
| B. | +0.33% |
| C. | +1.30% |
| D. | +3.3% |
| Answer» C. +1.30% | |
| 1911. |
Which of the following oscillator circuits uses three capacitors in the phase shifting network? |
| A. | Hartley |
| B. | Clapp |
| C. | Colpitt's |
| D. | Both (b) and (c) |
| Answer» C. Colpitt's | |
| 1912. |
In CE approximation, the upper end of d.c. load line is called the __________ point and the lower end is the __________ point. |
| A. | Q, base |
| B. | base, Q |
| C. | saturation, cut off |
| D. | cut off, saturation |
| Answer» D. cut off, saturation | |
| 1913. |
In a class C power amplifier |
| A. | resonant frequency of tuned circuit is equal to fundamental frequency of pulsed waveform |
| B. | resonant frequency of tuned circuit is half the fundamental frequency of pulsed waveform |
| C. | resonant frequency of tuned circuit has no relation to the fundamental frequency of pulsed waveform |
| D. | either (b) or (c) |
| Answer» B. resonant frequency of tuned circuit is half the fundamental frequency of pulsed waveform | |
| 1914. |
V MOS have the advantage of |
| A. | faster switching |
| B. | no thermal run away |
| C. | both (a) and (b) |
| D. | none of the above |
| Answer» D. none of the above | |
| 1915. |
For an op-amp source follower circuit |
| A. | input and output voltages have same magnitude |
| B. | output and input voltages are in phase |
| C. | output and input voltages are in phase but have different magnitudes |
| D. | output and input voltages have same magnitude and are in phase |
| Answer» E. | |
| 1916. |
A low noise device is most important |
| A. | at front end of equipment |
| B. | in the last stage of equipment |
| C. | in the middle stages of equipment |
| D. | both (b) and (c) |
| Answer» B. in the last stage of equipment | |
| 1917. |
In a cascade amplifier, the intermediate stages are always in |
| A. | CC configuration |
| B. | CB configuration |
| C. | CE configuration |
| D. | any of the above |
| Answer» D. any of the above | |
| 1918. |
The ac input voltage of an amplifier |
| A. | is always equal to ac signal voltage |
| B. | may be equal to or more than ac signal voltage |
| C. | is always less than ac signal voltage |
| D. | may be equal or more or less than ac signal voltage |
| Answer» E. | |
| 1919. |
Assertion (A): Negative feedback reduces the gain of an amplifierReason (R): Negative feedback is very commonly used in amplifier circuits |
| A. | Both A and R are correct and R is correct explanation for A |
| B. | Both A and R are correct but R is not correct explanation for A |
| C. | A is correct R is wrong |
| D. | A is wrong R is correct |
| Answer» C. A is correct R is wrong | |
| 1920. |
In the re model of a BJT amplifier, the ac resistance of diode at room temperature is about (IE is quiescent emitter current) |
| A. | <img src="/_files/images/electronics-and-communication-engineering/analog-electronics/310-139-1.png"> |
| B. | <img src="/_files/images/electronics-and-communication-engineering/analog-electronics/310-139-2.png"> |
| C. | <img src="/_files/images/electronics-and-communication-engineering/analog-electronics/310-139-3.png"> |
| D. | <img src="/_files/images/electronics-and-communication-engineering/analog-electronics/310-139-4.png"> |
| Answer» B. <img src="/_files/images/electronics-and-communication-engineering/analog-electronics/310-139-2.png"> | |
| 1921. |
The emitter resistor RE in the emitter of CE amplifier stabilizes the dc operating point against variation in |
| A. | temperature only |
| B. | of transistor |
| C. | both temperature and |
| D. | none of the above |
| Answer» D. none of the above | |
| 1922. |
As a compared to a CB amplifier, a CE amplifier has |
| A. | lower current amplification |
| B. | higher current amplification |
| C. | lower input resistance |
| D. | higher input resistance |
| Answer» C. lower input resistance | |
| 1923. |
The stray capacitance between the last stage and the first stage of an oscillator may cause |
| A. | unwanted low frequency oscillations |
| B. | unwanted high frequency oscillations |
| C. | unwanted oscillations at low and high frequencies |
| D. | large feedback |
| Answer» C. unwanted oscillations at low and high frequencies | |
| 1924. |
In a voltage regulator circuit using zener diode the load voltage is nearly constant only if |
| A. | zener current is very small |
| B. | zener current is very large |
| C. | zener current is neither small nor large |
| D. | None of the above |
| Answer» B. zener current is very large | |
| 1925. |
A JFET is a |
| A. | unipolar device |
| B. | bipolar device |
| C. | tripolar device |
| D. | none of the above |
| Answer» B. bipolar device | |
| 1926. |
Symbol shown in figure represents a |
| A. | P-channel DEMOSFET |
| B. | N-channel DEMOSFET |
| C. | UJT with N-type base |
| D. | UJT with P-type base |
| Answer» D. UJT with P-type base | |
| 1927. |
When a transistor is to be at a temperature above 25 C |
| A. | smaller heat sink be provided |
| B. | maximum power rating be derated |
| C. | biasing circuit must be strengthened |
| D. | earth connections must be connected through a resistor |
| Answer» C. biasing circuit must be strengthened | |
| 1928. |
Assertion (A): In monolithic IC the components are part of one chipReason (R): An op-amp is a high gain dc amplifier |
| A. | Both A and R are correct and R is correct explanation for A |
| B. | Both A and R are correct but R is not correct explanation for A |
| C. | A is correct R is wrong |
| D. | A is wrong R is correct |
| Answer» C. A is correct R is wrong | |
| 1929. |
The disadvantage of FET over BJT is |
| A. | poor high frequency performance |
| B. | low power-handling ability |
| C. | low values of voltage gain |
| D. | all of the above |
| Answer» E. | |
| 1930. |
The most widely used LC oscillator is |
| A. | Hartley oscillator |
| B. | Crystal oscillator |
| C. | Colpitt's oscillator |
| D. | Clapp's oscillator |
| Answer» B. Crystal oscillator | |
| 1931. |
Which of the following is the fastest switching device? |
| A. | JFET |
| B. | BJT |
| C. | MOSFET |
| D. | Triode |
| Answer» D. Triode | |
| 1932. |
Negative feedback in amplifier |
| A. | reduces gain |
| B. | increases frequency and phase distortion |
| C. | reduces bandwidth |
| D. | increases noise |
| Answer» B. increases frequency and phase distortion | |
| 1933. |
Which of the following is not valid in case of bipolars? |
| A. | It has a low input impedance |
| B. | It has high voltage gain |
| C. | It is a current controlled device |
| D. | It is difficult to bias |
| Answer» E. | |
| 1934. |
The input resistance of JFET ideally approaches |
| A. | zero |
| B. | 1 ohm |
| C. | 100 ohm |
| D. | infinity |
| Answer» E. | |
| 1935. |
The ripple factor of a full wave rectifier is about 0.5 |
| A. | True |
| B. | False |
| Answer» B. False | |
| 1936. |
The configuration of figure is a |
| A. | Hartley oscillator |
| B. | Precision Integrator |
| C. | Wienbridge oscillator |
| D. | Butterworth high pass filter |
| Answer» D. Butterworth high pass filter | |
| 1937. |
The voltage gains of an amplifier without feedback and with negative feedback respectively are 100 and 20. The percentage of negative feedback would be. |
| A. | 40% |
| B. | 5% |
| C. | 20% |
| D. | 80% |
| Answer» D. 80% | |
| 1938. |
Assertion (A): In a differential amplifier the current through common emitter resistor is called tail currentReason (R): CMRR of an op-amp indicates how a differential signal amplified |
| A. | Both A and R are correct and R is correct explanation for A |
| B. | Both A and R are correct but R is not correct explanation for A |
| C. | A is correct R is wrong |
| D. | A is wrong R is correct |
| Answer» D. A is wrong R is correct | |
| 1939. |
Assertion (A): In class A amplifier the distortion is minimumReason (R): In class A amplifier collector current exists for 360 of input cycle |
| A. | Both A and R are correct and R is correct explanation for A |
| B. | Both A and R are correct but R is not correct explanation for A |
| C. | A is correct R is wrong |
| D. | A is wrong R is correct |
| Answer» B. Both A and R are correct but R is not correct explanation for A | |
| 1940. |
Assertion (A): In a push pull circuit each transistor stays in the active region for one half cycleReason (R): A push pull amplifier has low distortion |
| A. | Both A and R are correct and R is correct explanation for A |
| B. | Both A and R are correct but R is not correct explanation for A |
| C. | A is correct R is wrong |
| D. | A is wrong R is correct |
| Answer» B. Both A and R are correct but R is not correct explanation for A | |
| 1941. |
Logarithmic amplifiers are used in |
| A. | adders |
| B. | dividers |
| C. | multipliers |
| D. | all of the above |
| Answer» C. multipliers | |
| 1942. |
Quartz crystal has |
| A. | very small Q |
| B. | small Q |
| C. | very high Q |
| D. | Q less than 1 |
| Answer» D. Q less than 1 | |
| 1943. |
The current ICBO |
| A. | increases with increases in temperature |
| B. | is normally greater for silicon transistor than germanium transistors |
| C. | mainly depends on the emitter base junction bias |
| D. | depends largely on the emitter doping |
| Answer» B. is normally greater for silicon transistor than germanium transistors | |
| 1944. |
Figure represents a |
| A. | JFET shunt switching circuit |
| B. | JFET series switching circuit |
| C. | JFET analog switch |
| D. | multiplexing |
| Answer» C. JFET analog switch | |
| 1945. |
In figure VBE = 0.7 V. If base current required to saturate the transistor is 0.1 mA, Vi = |
| A. | 5 V |
| B. | 5.7 V |
| C. | 10 V |
| D. | 10.7 V |
| Answer» C. 10 V | |
| 1946. |
In a biased JFET (Figure) the shape of the channel is as shown because |
| A. | it is the property of material used |
| B. | the drain end is more reverse biased than source end |
| C. | drain end is more forward biased than source end |
| D. | impurity profile changes with distance |
| Answer» C. drain end is more forward biased than source end | |
| 1947. |
A complementary symmetry amplifier has |
| A. | 1 P-N-P and 1 N-P-N transistor |
| B. | 2 P-N-P transistor |
| C. | 2 N-P-N transistor |
| D. | 2 P-channel FETs |
| Answer» B. 2 P-N-P transistor | |
| 1948. |
The units of are |
| A. | V |
| B. | V |
| C. | <sup>-1</sup> |
| D. | J |
| E. | J/K |
| Answer» C. <sup>-1</sup> | |
| 1949. |
In an inverting amplifier using op-amp the current input to the inverting terminal |
| A. | is equal to the current through feedback resistance |
| B. | is less than the current through feedback resistance |
| C. | is more than the current through feedback resistance |
| D. | may be equal to, less or more than current through feedback resistance |
| Answer» B. is less than the current through feedback resistance | |
| 1950. |
Saturation region of a JFET is also known as |
| A. | source region |
| B. | analog region |
| C. | pinch off region |
| D. | ohmic region |
| Answer» E. | |