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This section includes 158 Mcqs, each offering curated multiple-choice questions to sharpen your Electronics & Communication Engineering knowledge and support exam preparation. Choose a topic below to get started.
| 151. |
The extremely high input impedance of a MOSFET is primarily due to the |
| A. | absence of its channel |
| B. | negative gate- source voltage |
| C. | depletion of current carriers |
| D. | extremely small leakage current of its gate capacitor |
| Answer» E. | |
| 152. |
A FET consists of a |
| A. | source |
| B. | drain |
| C. | gate |
| D. | all the above |
| Answer» E. | |
| 153. |
When a transistor is fully switched ON, it is said to be |
| A. | shorted |
| B. | saturated |
| C. | open |
| D. | cut-off |
| Answer» C. open | |
| 154. |
The emitter of a transistor is generally doped the heaviest because it |
| A. | has to dissipate maximum power |
| B. | has to supply the charge carriers |
| C. | is the first region of the transistor |
| D. | must possess low resistance |
| Answer» B. has to supply the charge carriers | |
| 155. |
The base of an npn transistor is thin and |
| A. | heavily doped |
| B. | lightly doped |
| C. | metallic |
| D. | doped by a pentavalent material |
| Answer» C. metallic | |
| 156. |
The barrier potential across each silicon depletion layer is |
| A. | 0v |
| B. | 0.3v |
| C. | 0.7v |
| D. | 1v |
| Answer» D. 1v | |
| 157. |
In an npn transistor, the majority carriers in the emitter are |
| A. | free electrons |
| B. | holes |
| C. | neither |
| D. | both |
| Answer» B. holes | |
| 158. |
A transistor has how many pn junctions? |
| A. | 1 |
| B. | 2 |
| C. | 3 |
| D. | 4 |
| Answer» C. 3 | |