MCQOPTIONS
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MCQOPTIONS
This section includes 13 Mcqs, each offering curated multiple-choice questions to sharpen your Vlsi knowledge and support exam preparation. Choose a topic below to get started.
| 1. |
THE_ION_IS_STEERED__________OF_THE_LATTICE?$ |
| A. | up the open directions |
| B. | down the open directions |
| C. | up the closed directions |
| D. | down the closed directions |
| Answer» C. up the closed directions | |
| 2. |
Electrons become hot in gallium arsenide when energy of$ |
| A. | lower valley electrons decreases |
| B. | lower valley electrons rises |
| C. | higher valley electrons decreases |
| D. | higher valley electrons rises |
| Answer» C. higher valley electrons decreases | |
| 3. |
If equivalent direction is not used, ______ will be increased$ |
| A. | ion concentration |
| B. | steering angle |
| C. | area coverage |
| D. | depth distribution |
| Answer» E. | |
| 4. |
When electrons become hot, drift velocity |
| A. | increses |
| B. | decreases |
| C. | remains the same |
| D. | does not depend on drift velocity |
| Answer» C. remains the same | |
| 5. |
_______ influences the properties of GaAs field affect transisto? |
| A. | length dependency |
| B. | structural dependency |
| C. | material dependency |
| D. | orientation dependency |
| Answer» E. | |
| 6. |
Which is the lightest p-type dopant |
| A. | beryllium |
| B. | magnesium |
| C. | silicon |
| D. | arsenic |
| Answer» B. magnesium | |
| 7. |
______ is used for the formation of p-type material |
| A. | beryllium |
| B. | magnesium |
| C. | beryllium and magnesium |
| D. | aluminium |
| Answer» D. aluminium | |
| 8. |
Increase in positive charge, _____ the effective nuclear charge |
| A. | increases |
| B. | decreases |
| C. | exponentially increases |
| D. | does not affect |
| Answer» B. decreases | |
| 9. |
______ is used as the dopant for the formation of n-type material |
| A. | aluminum |
| B. | arsenic |
| C. | silicon |
| D. | gallium |
| Answer» D. gallium | |
| 10. |
Which element is smaller? |
| A. | arsenic |
| B. | gallium |
| C. | silicon |
| D. | aluminium |
| Answer» B. gallium | |
| 11. |
______ elements can act as either donors or acceptors |
| A. | group II |
| B. | group III |
| C. | group IV |
| D. | group V |
| Answer» D. group V | |
| 12. |
The behaviour of the switching element is decided by |
| A. | selection of impurity |
| B. | concentration density |
| C. | both of the mentioned |
| D. | none of the mentioned |
| Answer» D. none of the mentioned | |
| 13. |
Addition of impurities is essential for creating switching devices. |
| A. | true |
| B. | false |
| Answer» B. false | |