MCQOPTIONS
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MCQOPTIONS
This section includes 13 Mcqs, each offering curated multiple-choice questions to sharpen your Vlsi knowledge and support exam preparation. Choose a topic below to get started.
| 1. |
Pinch-off voltage is ______ to channel concentration density. |
| A. | directly related |
| B. | inversely related |
| C. | exponentially related |
| D. | is not related |
| Answer» B. inversely related | |
| 2. |
Threshold voltage is independent of pinch-off voltage. |
| A. | true |
| B. | false |
| Answer» C. | |
| 3. |
Impurity concentration should be |
| A. | greater than 20% |
| B. | lesser than 20% |
| C. | greater than 10% |
| D. | lesser than 10% |
| Answer» C. greater than 10% | |
| 4. |
The drain current is independent of |
| A. | Vgs |
| B. | Vds |
| C. | Vt |
| D. | Vs |
| Answer» B. Vds | |
| 5. |
Threshold voltage is ________ on implant depth. |
| A. | proportionally dependent |
| B. | inversely proportionally dependent |
| C. | exponentially dependent |
| D. | logarithmically dependent |
| Answer» D. logarithmically dependent | |
| 6. |
In D-MESFET, voltage swing is less than 1V. |
| A. | true |
| B. | false |
| Answer» C. | |
| 7. |
Standard deviation of threshold voltage should be ______ of logic voltage swing. |
| A. | less than 5% |
| B. | more than 5% |
| C. | less than 10% |
| D. | more than 10% |
| Answer» B. more than 5% | |
| 8. |
To keep dynamic switching energy small |
| A. | logic voltage swing must be large |
| B. | logic current swing must be large |
| C. | logic voltage swing must be small |
| D. | logic current swing must be small |
| Answer» D. logic current swing must be small | |
| 9. |
The dynamic switching energy must exceed the capacitive load. |
| A. | true |
| B. | false |
| Answer» B. false | |
| 10. |
The threshold voltage is sensitive to |
| A. | channel length |
| B. | channel depth |
| C. | doping density |
| D. | doping of the channel layer |
| Answer» E. | |
| 11. |
Pinch-off voltage is a function of |
| A. | channel depth |
| B. | channel thickness |
| C. | channel length |
| D. | channel density |
| Answer» C. channel length | |
| 12. |
Pinch-off voltage is equal to |
| A. | built-in potential |
| B. | applied voltage |
| C. | sum of built-in potential and applied voltage |
| D. | difference of built-in potential and applied voltage |
| Answer» D. difference of built-in potential and applied voltage | |
| 13. |
Depletion mode MESFET operates as |
| A. | reverse biased |
| B. | forward biased |
| C. | both reverse and forward biased |
| D. | none of the mentioned |
| Answer» B. forward biased | |