MCQOPTIONS
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MCQOPTIONS
This section includes 6 Mcqs, each offering curated multiple-choice questions to sharpen your Linear Integrated Circuit knowledge and support exam preparation. Choose a topic below to get started.
| 1. |
Which method is most suitable for silicon crystal growth in silicon wafer preparation? |
| A. | Float zone process |
| B. | Bridgeman-Stockbarger method |
| C. | Czochralski crystal growth process |
| D. | Laser heated pedestal growth |
| Answer» D. Laser heated pedestal growth | |
| 2. |
In which method shallow penetration of dopants is possible? |
| A. | Ion implantation |
| B. | Vertical diffusion |
| C. | Horizontal diffusion |
| D. | Dopants diffusion |
| Answer» B. Vertical diffusion | |
| 3. |
During ion implantation process (before the ion strike the wafer) the accelerated ions are passed through |
| A. | Strong Electric field |
| B. | Strong Magnetic field |
| C. | Strong Electric and Magnetic Field |
| D. | None of the mentioned |
| Answer» C. Strong Electric and Magnetic Field | |
| 4. |
What will be the next step after slicing (process) silicon wafers? |
| A. | All of the mentioned |
| B. | Lapping |
| C. | Polishing |
| D. | Chemical |
| Answer» B. Lapping | |
| 5. |
Pick out the incorrect statementAluminium is usually used for metallization of most IC as it offers |
| A. | Relatively a good conductor |
| B. | High resistance |
| C. | Good mechanical bond with silicon |
| D. | Deposition of aluminium film using vacuum deposition |
| Answer» D. Deposition of aluminium film using vacuum deposition | |
| 6. |
The major disadvantage of PN-junction isolation technique is: |
| A. | Formation of Parasitic Resistance |
| B. | Formation of Parasitic Capacitance |
| C. | Formation of Isolation island |
| D. | None of the mentioned |
| Answer» C. Formation of Isolation island | |