Thermal runaway in a transistor biased in the active region is due to1. heating of the transistor.2. change in β due to an increase in temperature.3. change in reverse collector saturation current due to a rise in temperature.4. base-emitter voltage VBE which decreases with rise in temperature.Which of the above statements is/are correct?

Thermal runaway in a transistor biased in the active region is due to1

1.	Thermal runaway in a transistor biased in the active region is due to1. heating of the transistor.2. change in β due to an increase in temperature.3. change in reverse collector saturation current due to a rise in temperature.4. base-emitter voltage VBE which decreases with rise in temperature.Which of the above statements is/are correct?
A.	1 and 2
B.	2 and 3
C.	3 only
D.	4 only
Answer» C. 3 only