MCQOPTIONS
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| 1. |
The sequence of first to last step involved in a typical silicon gate n - MOS transistor is(A) Gate oxidation(B) Contact cuts(C) Patterning SiO2 layer(D) Implant or diffusion(E) Patterning of aluminium layerChoose the correct answer from the options given below:(1) (C), (D), (A), (B), (E)(2) (B), (D), (A), (C), (E)(3) (C), (A), (D), (B), (E)(4) (B), (A), (D), (E), (C) |
| A. | 1 |
| B. | 2 |
| C. | 3 |
| D. | 4 |
| Answer» D. 4 | |