1.

The sequence of first to last step involved in a typical silicon gate n - MOS transistor is(A) Gate oxidation(B) Contact cuts(C) Patterning SiO2 layer(D) Implant or diffusion(E) Patterning of aluminium layerChoose the correct answer from the options given below:(1) (C), (D), (A), (B), (E)(2) (B), (D), (A), (C), (E)(3) (C), (A), (D), (B), (E)(4) (B), (A), (D), (E), (C)

A. 1
B. 2
C. 3
D. 4
Answer» D. 4


Discussion

No Comment Found