1.

Statement (I): Gunn effect device is a slice made from n-doped GaAs and provides negative resistance characteristics.Statement (II): GaAs has an empty energy band higher in energy than the filled or partly filled bands.Codes:

A. Both Statement (I) and Statement (II) are individually true and Statement (II) is the correct explanation of Statement (I)
B. Both Statement (I) and Statement (II) are individually true but Statement (II) is not the correct explanation of Statement (I)
C. Statement (I) is true but Statement (II) is false
D. Statement (I) is false but Statement (II) is true
Answer» C. Statement (I) is true but Statement (II) is false


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