Silicon is doped with boron to a concentration of 4 x 1017 atoms/cm3. – McqOptions

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1.	Silicon is doped with boron to a concentration of 4 x 1017 atoms/cm3. Assuming the intrinsic carrier concentration of silicon to be 1.5 x 1010/cm3 and the value of to be 25mV at 300K. Compared to undoped silicon, the Fermi level of doped silicon
A.	goes down by 0.13 eV
B.	goes up by 0.13 eV
C.	goes down by 0.427 eV
D.	goes up by 0.427 eV
Answer» D. goes up by 0.427 eV

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