Silicon devices can be employed for a higher temperature limit (190°C to 200°C) as compared to germanium devices (85°C to 100°C). With respect to this, which of the following are incorrect?1) Higher resistivity of silicon2) Higher gap energy of silicon3) Lower intrinsic concentration of silicon4) Use of silicon devices in high-power applicationsSelect the correct answer using the code given below:

Silicon devices can be employed for a higher temperature limit (190°C

1.	Silicon devices can be employed for a higher temperature limit (190°C to 200°C) as compared to germanium devices (85°C to 100°C). With respect to this, which of the following are incorrect?1) Higher resistivity of silicon2) Higher gap energy of silicon3) Lower intrinsic concentration of silicon4) Use of silicon devices in high-power applicationsSelect the correct answer using the code given below:
A.	1, 2 and 4
B.	1, 2 and 3
C.	1, 3 and 4
D.	2, 3 and 4
Answer» C. 1, 3 and 4