MCQOPTIONS
Home
About Us
Contact Us
Bookmark
Saved Bookmarks
Testing Subject
General Aptitude
Logical and Verbal Reasoning
English Skills Ability
Technical Programming
Current Affairs
General Knowledge
Finance & Accounting
GATE (Mechanical Engineering)
Chemical Engineering
→
Vlsi
→
Characteristics Npn Bipolar Transistors
→
Latch-up can be induced by
1.
Latch-up can be induced by
A.
incident radiation
B.
reflected radiation
C.
etching
D.
diffracted radiation
Answer» B. reflected radiation
Show Answer
Discussion
No Comment Found
Post Comment
Related MCQs
BJT gain should be ______ to avoid latch-up effect.
Latch-up is brought about by BJTs __________
Latch-up is the generation of __________
To reduce latch-up effect substrate resistance should be high.
The reduction in carrier lifetime brings about __________
The parasitic PNP transistor has the effect of _______ carrier lifetime.
Which one of the following is the main factor for reducing the latch-up effect?
Which process produces a circuit which is less prone to latch-up effect?
Latch-up can be induced by __________
In latch-up condition, parasitic component gives rise to __________ conducting path.
Reply to Comment
×
Name
*
Email
*
Comment
*
Submit Reply
Your experience on this site will be improved by allowing cookies. Read
Cookie Policy
Reject
Allow cookies