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In RC inductive reactance, FET is so arranged that
1.
In RC inductive reactance, FET is so arranged that
A.
Xc > R
B.
Xc < R
C.
Xc = R
D.
Xc = 10 R
Answer» C. Xc = R
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Related MCQs
The arrow on the schematic symbol for a MOSFET indicates the channel material type.
When biased as a variable resistor, JFET resistance (RDS) increases as VGS becomes more negative.
An E-MOSFET can be operated with either positive or negative values of VGS.
The MOSFET has no pn junction.
One advantage of a JFET over the BJT is its high input resistance.
The E-MOSFET has no physical channel.
The Q-point in a JFET with voltage-divider bias is more stable than in a self-biased JFET.
It is not necessary to exercise any particular care in handling a MOSFET.
A VMOS device can handle higher power and voltage than a conventional MOSFET.
The JFET operates with a reverse-biased pn junction (gate-to source).
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