Consider an n-channel MOSFET having width W, length L and electron mobility in the channel is μn and capacitance per unit area is Cox. If gate to source voltage VGS = 0.7V, drain to source voltage VDS = 0.2 V, μnCox = 120μA/V, threshold voltage VT = 0.4V and (W/L) = 60. Calculate the trans-conductance gm in mA/V.

Consider an n-channel MOSFET having width W, length L and electron mob

1.	Consider an n-channel MOSFET having width W, length L and electron mobility in the channel is μn and capacitance per unit area is Cox. If gate to source voltage VGS = 0.7V, drain to source voltage VDS = 0.2 V, μnCox = 120μA/V, threshold voltage VT = 0.4V and (W/L) = 60. Calculate the trans-conductance gm in mA/V.
A.	2.5mA /V
B.	1.65 mA /V
C.	3mA /V
D.	1.44mA /V
Answer» E.