At room temperature, a possible value for the mobility of electrons in – McqOptions

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1.	At room temperature, a possible value for the mobility of electrons in the inversion layer of a silicon n-channel MOSFET is
A.	450 cm2/V-s
B.	1350 cm2/V-s
C.	1800 cm2/V-s
D.	3600 cm2/V-s
Answer» C. 1800 cm2/V-s

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