Assuming VCE(Sat) = 0.3 V for a silicon transistor at an ambient temperature of 25°C and hFE = 50, then the minimum base current IB required to drive the transistor into saturation for the circuit shown is:

Assuming VCE(Sat) = 0.3 V for a silicon transistor at an ambient tempe

1.	Assuming VCE(Sat) = 0.3 V for a silicon transistor at an ambient temperature of 25°C and hFE = 50, then the minimum base current IB required to drive the transistor into saturation for the circuit shown is:
A.	64 μA
B.	78 μA
C.	94 μA
D.	140 μA
Answer» D. 140 μA